參數(shù)資料
型號： S2387-66R
廠商： Hamamatsu Photonics
英文描述： Si photodiode For visible to IR, general-purpose photometry
中文描述： 硅光電二極管對可見光，紅外線，通用光度法
文件頁數(shù)： 3/4頁
文件大小： 121K
代理商： S2387-66R
Si photodiode
S2387 series
8.5 ± 0.2
2
1
6
ANODE
TERMINAL MARK
13.5 ± 0.13
15 ± 0.15
0
ACTIVE AREA
HOLE
(2 ×) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
7.6 ± 0.1
6
ACTIVE AREA
2
1
0
0
6.6 ± 0.3
4.5 ± 0.2
5
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 ± 0.1
8
ACTIVE AREA
2
1
0
0
9.2 ± 0.3
7.4 ± 0.2
8
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
1
ACTIVE AREA
2
1
0
0
15.1 ± 0.3
12.5 ± 0.2
1
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
I
Dimensional outlines (unit: mm)
S2387-16R
S2387-33R
KSPDA0106EA
KSPDA0108EA
KSPDA0112EA
KSPDA0110EA
S2387-66R
S2387-1010R
3
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