參數(shù)資料
型號(hào)： S216SE2
廠商： Sharp Corporation
元件分類(lèi)： 固態(tài)繼電器
英文描述： SIP Type SSR for Medium Power Control
中文描述： 園區(qū)型蘇維埃社會(huì)主義共和國(guó)為中等功率控制
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 64K
代理商： S216SE2
I
Electrical Characteristics
(Ta = 25C)
S202SE1/S202SE2/S216SE1/S216SE2
Parameter
Symbol
V
F
I
R
I
DRM
Conditions
MIN.
-
-
-
-
-
-
30
5
-
-
-
10
10
-
-
-
-
-
TYP.
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.5
3.3
MAX.
1.4
10
-4
10
-4
1.5
1.5
50
-
-
35
8
8
-
1
9.3
9.3
-
-
Unit
V
A
A
Input
Forward voltage
Reverse current
Repetitive peak OFF-state current
I
F
= 20mA
V
R
= 3V
V
D
= V
DRM
I
T
= 2A
rms
I
T
= 16A
rms
Output
ON-state voltage
S202SE1 / S202SE2
S216SE1 / S216SE2
V
T
V
rms
Holding current
Critical rate of rise of OFF-state voltage
Critical rate of rise of commutating OFF-state voltage
Zero-cross voltage
I
H
-
mA
V/
μ
s
V/
μ
s
V
V
D
= 2/3V
DRM
Tj= 125C, V
D
= 400V *6
S202SE2/S216SE2
S202SE1/S216SE1
S202SE2/S216SE2
V
OX
I
F
= 8mA
V
D
= 12V, R
L
= 30
V
D
= 6V, R
L
= 30
DC500V, 40 to 60 %RH
Transfer
charac-
teristics
Minimum trigger
current
Isolation resistance
I
FT
mA
R
ISO
Turn-on time
S202SE1/S216SE1
S202SE2/S216SE2
t
on
AC60Hz
ms
Turn-off time
t
off
AC60Hz
ms
Thermal resistance
(
Between junction and case
)
S202SE1/S202SE2
S216SE1/S216SE2
R
th
(j - c)
C/W
Thermal resistance
(
Between junction and ambience
)
R
th
(j - a)
-
40
-
C/W
*6 dI
T
/dt = -4.0A/ms
(S202SE1/ S202SE2)
dI
T
/dt = -8.0A/ms
(S216SE1/ S216SE2)
- 20
0
20
Ambient temperature T
a
(C)
40
60
80
100
120
140
0
1
2
3
4
- 20
60
20
Ambient temperature T
a
(C)
0
0
40
80
100
140
120
2
1
3
4
-
-
Fig.1-a RMS ON-state Current vs. Ambient
Temperature
(S202SE1/ S202SE2)
(S216SE1/ S216SE2)
Fig.1-b RMS ON-state Current vs.
Ambient Temperature
R
T
R
T
dV/dt
(dV/dt)c
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