參數(shù)資料
型號： S2008DS2
英文描述： INDUCTOR 4.7UH 100MA 20% 0603
中文描述： 敏感可控硅
文件頁數(shù)： 5/12頁
文件大?。?/td> 198K
代理商： S2008DS2
Data Sheets
Sensitive SCRs
2002 Teccor Electronics
Thyristor Product Catalog
E5 - 5
http://www.teccor.com
+1 972-580-7777
Electrical Specifications Notes
(1)
See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2)
(3)
See Figure E5.10 for I
GT
versus T
C
or T
L
.
See Figure E5.11 for instantaneous on-state current (i
T
) versus on-
state voltage (v
T
) TYP.
See Figure E5.12 for V
GT
versus T
C
or T
L
.
See Figure E5.13 for I
H
versus T
C
or T
L
.
For more than one full cycle, see Figure E5.14.
0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 μs minimum,
15 μs maximum. See Figure E5.20 and Figure E5.21.
See Figure E5.15 for t
gt
versus I
GT
.
Test conditions as follows:
– T
C
or T
L
80 °C, rectangular current waveform
– Rate-of-rise of current 10 A/μs
– Rate-of-reversal of current 5 A/μs
– I
TM
= 1 A (50 μs pulse), Repetition Rate = 60 pps
– V
RRM
= Rated
– V
R
= 15 V minimum, V
DRM
= Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/μs
– Gate Bias = 0 V, 100
(during turn-off time interval)
(4)
(5)
(6)
(7)
(8)
(9)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 A
PK
; T106/T107 devices are 4 A
PK
.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) V
D
= 6 V dc, R
L
= 100
(See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) I
GT
= 500 μA maximum at T
C
= -40 °C for T106 devices
(15) I
H
= 10 mA maximum at T
C
= -65 °C for 2N5064 Series and
2N6565 Series devices
(16) I
H
= 6 mA maximum at T
C
= -40 °C for T106 devices
(17) Pulse Width 10 μs
(18) I
GT
= 350 μA maximum at T
C
= -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher I
GT
types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) T
C
or T
L
= T
J
for test conditions in off state
(21) I
DRM
and I
RRM
= 50 μA for 2N5064 and 100 μA for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) T
C
= 110 °C
V
GT
I
H
I
GM
(17)
V
GRM
P
GM
(17)
P
G(AV)
I
TSM
(6) (13)
dv/dt
di/dt
t
gt
(8)
t
q
(9)
l
2
t
(4) (12) (22)
Volts
T
C
=
25 °C
MAX
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
(5) (19)
mAmps
MAX
6
6
6
8
8
8
6
6
6
8
8
8
6
6
6
8
8
8
Amps
Volts
MIN
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
Watts
Watts
Amps
60/50 Hz
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
Volts/μSec
Amps/μSec
μSec
TYP
4
4
4
5
5
5
4
4
4
5
5
5
4
4
4
5
5
5
μSec
MAX
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
Amps
2
Sec
T
C
=
-40 °C
T
C
=
110 °C
T
C
= 110 °C
TYP
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
相關PDF資料
PDF描述
S2008DS3 Sensitive SCRs
S2008F1 SCRs 1-70 AMPS NON-SENSITIVE GATE
S2008L SCRs
S2008R SCRs 1-70 AMPS NON-SENSITIVE GATE
S2008V SCRs
相關代理商/技術參數(shù)
參數(shù)描述
S2008DS2RP 功能描述:SCR 8A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S2008DS2TP 功能描述:SCR 8A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S2008DS3 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Sensitive SCRs (0.8 A to 10 A)
S2008DS3RP 功能描述:SCR 8A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S2008DS3TP 功能描述:SCR 8A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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