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參數(shù)資料
| 型號： | S1T8527C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1 CHIP CLP SUBSYSTEM IC |
| 中文描述： | 1芯片集成電路中電子系統(tǒng) |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 185K |
| 代理商： | S1T8527C |
S1T8527C
1 CHIP CLP SUBSYSTEM IC
8
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Operating Voltage
Vcc
2.0
5.5
V
RECEIVER
( V
CC
= 3.6V, f
C
= 49.7MHz, f
DEV
=
±
3kHz, f
MOD
= 1kHz,Ta = 25
°
C, unless otherwise specified )
Input for
3dB Sensitivity
V
LIM
3dB Point
Input for 20dB Sensitivity
V
I(SEN)
Modulation Input
S/N Ratio
S/N
Modulation Input
No Modulation Input
0.7
2.0
μ
Vrms
0.7
2.0
μ
Vrms
48
55
dB
Recovered Audio Output
V
O(RA)
V
NO
V
O(RAD)
RFin = 1mVrms
145
185
225
mVrms
Noise Output Level
RFin = No Input
130
205
mVrms
Recovered Audio Output
Voltage Drop
Vcc = 5V
→
2V
RFin = 1mVrms
8
3.3
dB
Detect Output Voltage
V
O(DET)
V
TH(DET)
V
TH
RFin = 1mVrms
1.0
1.5
2.0
V
Carrier Detector Threshold
RFin = No Input
0.49
0.60
0.73
V
Comparator Threshold
Voltage Difference
V
COMP
= 150mVp-p
R
L
= 180k
V
COMP
= 150mVp-p
RL = 180k
70
110
150
mV
Comparator Output Voltage 1
V
OH
2.7
3.0
V
Comparator Output Voltage 2
V
OL
V
COMP
= 150mVp-p
R
L
= 180k
V
I(43)
= 1mVrms
R
L(38)
= 330
V
I(37)
= 1mVrms
R
L(34)
= 1.5k
RFin = 1mVrms
0.25
0.5
V
First Mixer Conversion
Voltage Gain
G
V(1M)
14
18
22
dB
Second Mixer Conversion
Voltage Gain
G
V(2M)
17
21
25
dB
Detector Output Distortion
THD
DET
R
O(DET)
V
O(DET)
1.5
2.5
%
Detector Output Resistance
RFin = 1mVrms
1.2
k
Detector Output DC Voltage
Change Ratio
RFin = 1mVrms
0.15
0.23
V/kHz
Meter Drive Slope
MDS
70
100
135
nA/dB
First Mixer Input Resistance
R
I(1M)
C
I(1M)
V
I(LIM)
S
V(2M)
fc = 50MHz
500
690
First Mixer Input Capacitance
fc = 50MHz
7.2
10
pF
Limiter Input Sensitivity
fc = 455kHz, 20dB SINAD
100
250
μ
Vrms
Second Mixer Input
Sensitivity
fc = 10.7MHz, 20dB SINAD
10
25
μ
Vrms
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