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參數(shù)資料
| 型號(hào)： | S1T8514B01-V0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FM IF RECEIVER WITH RSSI |
| 中文描述： | 與調(diào)頻中頻接收機(jī)的RSSI |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 104K |
| 代理商： | S1T8514B01-V0B0 |
FM IF RECEIVER WITH RSSI
S1T8514B
3
PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Pin No
Symbol
Description
1
OSCI
Oscillator input (Base). The oscillator is an internally biased colpitts type.
2
OSCO
Oscillator output.
3
MO
Mixer output (Output impedance
≈
2k
)
Connect a 455kHz filter between this pin and the LI.
4
V
CC
LI
V
CC
pin.
IF limiter amplifier input (Input impedance
≈
2k
)
5
6
LD
Bypass capacitor connect pin for the IF limiter amplifier.
7
FSKI
Differential Amp Reference input on the FSK comparator.
8
QD
Quadrature detection, phase shifter input.
9
RAO
Recovered audio signal output.
10
RSSI
Output pin for RSSI. This pin detects RF level by monitoring the limiter amplifier.
11
LPFI
Low pass filter a amplifier input. Bias is supplied from pin 9.
12
LPFO
Low pass filter amplifier output.
13
BSC
Battery saving control pin.
High: Battery saving off. Low: Battery saving on.
14
QC
Quick charge control pin.
High: Quick charge-discharge on. Low: Quick charge-discharge off.
15
FSKO
FSK signal output pin.
16
AO
Alarm output. This pin becomes High when VCC drops belows 1.05V.
17
REGC
S1T8514B has an internal PNP transistor.
But, it also can support an external PNP transistor to control the power.
18
REGO
Regulated Voltage output.
19
GND
Ground.
20
MI
Mixer input impedance
≈
5k
.
Characteristic
Symbol
Value
Unit
Max. Supply Voltage
V
CC (MAX)
P
D
T
OPR
T
STG
4
V
Power Dissipation
800
mW
Operating Temperature
20 to +70
°
C
Storage Temperature
55 to +125
°
C
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