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參數(shù)資料
| 型號(hào)： | S1T8513A02-V0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Reed Switch; Pull-In Amp Turns Max:51; Pull-In Amp Turns Min:24; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:20.5mm; Breakdown Voltage Min:580VDC |
| 中文描述： | 調(diào)頻中頻接收機(jī) |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 57K |
| 代理商： | S1T8513A02-V0B0 |
S1T8513A
FM IF RECEIVER
4
ELECTRICAL CHARACTERISTICS
(V
CC
= 1.4V
±
5%, f
IN
(2MIX)
= 21.4MHz, f
DEV
=
±
4.8kHz, f
MOD
= 600Hz, Ta = 25
°
C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Operating current
I
CCN
I
CCS
V
AD
V
O (AL)
I
LKG (AL)
V
L (FSK)
I
LKG (FSK)
V
O (REG)
I
C
V
LIM
V
I (SEN)
V
O (RAO)
G
V (M)
S/N
No Input Signal
1.1
1.6
mA
Battery Saving
0
10
μ
A
Alarm Detection Voltage
1.0
1.05
1.1
V
Alarm Low Level Output Voltage
I = 100
μ
A
0.4
V
Alarm High Level Leakage Current
2
μ
A
FSK Low Level Output Voltage
I = 100
μ
A
0.4
V
FSK High Level Leakage Current
2
μ
A
Regulator Output Voltage
0.95
1.0
1.05
V
Quick Charge Current
50
70
μ
A
Input for
3dB Sensitivity
Mixer Input
2.5
7.5
μ
Vrms
Input for
12dB SINAD Sensitivity
IF Input
6.0
18.0
μ
Vrms
Recovered Audio Output Voltage
V
IN (2MIX)
= 500
μ
Vrms
Ceramic Filter loss =
1dB
37
55
73
mVrms
Mixer Conversion Voltage Gain
8
12
16
dB
Signal to Noise Ratio
V
IN (2MIX)
= 500
μ
Vrms
V
IN (2MIX)
= 500
μ
Vrms
38
55
dB
Total Harmonic Distortion
THD
2.0
3.5
%
Mixer 3rd Order Intercept Point
3RD
10
dBm
Mixer Input Resistance
R
I (MIX)
R
I (LA)
AMR
3.5
5
6.5
k
Limiting Amplifier Input Resistance
1.4
2
2.6
k
AM Rejection Ratio
V
IN (2MIX)
= 5
μ
Vrms
(AM = 300%)
25
40
dB
Data Shaping Output Duty Ratio
DR
V
IN (2MIX)
= 500
μ
Vrms
40
50
60
%
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