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參數(shù)資料
| 型號： | S1T8501X01-D0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 5015 RR 4#4 PIN RECP |
| 中文描述： | 語音網(wǎng)絡(luò)與撥號器接口 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | S1T8501X01-D0B0 |
SPEECH NETWORK WITH DIALER INTERFACE
S1T8501
3
ELECTRICAL CHARACTERISTICS (TA = 25
°
C)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Line Voltage
V
L
Ta = 25
°
C
I
L
= 12mA
3.9
4.7
V
I
L
= 20mA
5.5
I
L
= 80mA
12.2
Common Mode Rejection Ratio
CMRR
f = 1kHz, I
L
= 12 to 80mA
50
dB
Line Matching Impedance
Z
L
V
RI
= 0.3V, I
L
= 12 to 80mA f = 1kHz
Ta = 25
°
C
f = 1kHz
VMI = 2mV
I
L
= 52mA
500
600
700
TX Gain
G
V (TX)
I
L
= 25mA
48
49
50
dB
44
45
46
I
L
= 25 to 52mA
48
49
50
TX Gain Flatness
G
V (TX)
V
MI
= 2mV, f
ref
= 1kHz, I
L
= 12 to 80mA
±
1
dB
TX Distortion
THD
TX
f = 1kHz
I
L
= 16 to
80mA
V
SO
= 1V
2
%
V
SO
= 1.3V
10
TX Noise
V
NO (TX)
V
MI
= 0V, I
L
= 40mA
Ta = 25
°
C, f= 1kHz, I
L
= 25 to 52mA
70
dBm
Side Tone
G
V (ST)
36
dB
MIC Input Impedance
Z
I (MIC)
V
MI
= 2mV, I
L
= 12 to 80mA
40
k
Tx Loss in MF Operation
G
V (LOSS)
V
MI
=2mV
I
L
= 25mA
30
30
dB
I
L
= 52mA
RX Gain
G
V (RX)
Ta = 25
°
C
V
RI
= 0.3V
f = 1kHz
I
L
= 25mA
7
8
9
dB
I
L
= 52mA
2.5
3.5
4.5
I
L
= 25 to 52mA
7
8
9
RX Gain Flatness
G
V (RX)
V
RI
= 0.3V, f
ref
= 1kHz, I
L
= 12 to 80mA
±
1
dB
RX Distortion
THDRX
f =1kHz
I
L
= 12mA
V
RO
= 1.6V
2
%
V
RO
= 1.9V
10
I
L
= 50mA
V
RO
= 1.8V
2
V
RO
= 2.1V
10
RX Noise
V
NO (RX)
V
RI
= 0V, I
L
= 12 to 80mA
100
μ
V
RX Output Impedance
R
O (RX)
V
RO
= 50mV, I
L
= 40mA
100
MF Supply Voltage
V
DD (MF)
I
L
= 12 to 80mA
2.4
2.5
V
MF Supply Current
Standby
I
SB (MF)
I
L
= 12 to 80mA
0.5
mA
Operation
I
DD (MF)
2
MF Amplifier Gain
G
V (MF)
I
L
= 12 to 80mA f
MF
= 1kHz,V
MF
= 80mV
15
17
dB
DC Input Voltage Level (pin 14)
V
I (MF)
V
MF
= 80mV
0.3V
DD
V
Input Impedance (pin 14)
Z
I (MF)
V
MF
= 80mV
40
k
Distortion
THD
MF
V
MF
= 110mV, I
L
= 12 to 80mA
2
%
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