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參數(shù)資料
| 型號： | S1T2425A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SPEECH NETWORK WITH DIALER INTERFACE |
| 中文描述： | 語音網(wǎng)絡(luò)與撥號器接口 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 77K |
| 代理商： | S1T2425A |
SPEECH NETWORK WITH DIALER INTERFACE
S1T2425A
3
Tip-Ring Voltage
(including polarity guard bridge
drop of 1.4V)
(Speech Mode)
V
TR
I
L
= 5.0mA
I
L
= 10mA
I
L
= 20mA
I
L
= 40mA
I
L
= 60mA
2.4
3.9
4.6
5.6
6.6
V
DC
AC impedance
Speech mode (incl. C
6
,see fig.
4)
Z
ac
= (600)V +/ (V
S
- V+)
Tone Mode (including C
6
)
SYSTEM AMPLIFIERS
Z
ac
I
L
= 20mA
I
L
= 60mA
20mA < IL , 60mA
750
300
1650
W
TX Gain
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXI input Resistance
G
V (TX)
V
BIAS (SPM)
V
BIAS (TM)
V
OL (SPM)
V
OL (SPM)
R
I (TXI)
TXI to TXO
Speech/Pulse Mode
Tone Mode
Speech/Pulse Mode
Speech/Pulse Mode
24
0.45
V
R
25
V
R
25
26
0.52
V
R
5.0
V
R
5.0
125
10
28
0.60
250
dB
xV
R
mV
mV
mV
k
RX
RXO Bias voltage
RXO Source current
RXO Source current
RXO High Voltage
RXO Low Voltage
V
BIAS (AM)
I
SOURCE (SM)
I
SOURCE (PTM)
V
OH (AM)
V
OL (AM)
All Mode
Speech Mode
Pulse/tone Mode
All Mode
All Mode
0.45
1.5
200
V
R
100
0.52
2.0
400
V
R
50
50
0.60
150
xV
R
mA
μ
A
mV
mV
SIDETONE AMPLIFIER
Gain (TXO to STA)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
Gv
(STA)
@V
LR
= 0.5V
@V
LR
= 2.5V
@V
LR
= 0.2V
@V
LR
= 1.0V
All Modes
15
21
15
21
dB
STA Bias Voltage
V
BIAS (STA)
0.65
0.8
0.9
xV
R
MICROPHONE, RECEIVER CONTROLS
MIC Saturation Voltage
V
SAT (MIC)
I
LKG (MIC)
R
RMT (SM)
R
RMT (DM)
t
D (RMT)
Speech Mode,1 = 500
μ
A
50
125
mV
MIC Leakage Current
Dialing Mode,Pin 1=3.0V
0
5.0
μ
A
MAT Resistance
Speech Mode
Dialing Mode
5.0
8.0
10
15
18
k
RMT Delay
Dialing to Speech
2.0
4.0
20
ms
EQUALIZATION AMPLIFIER
GAIN (V + to EQ)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
G
V (EQ)
@ V
LR
= 0.5V
@ V
LR
= 2.5V
@ V
LR
= 0.2V
@ V
LR
= 1.0V
12
2.5
12
2.5
dB
ELECTRICAL CHARACTERISTICS (T
a
= 25
°
C) (Continued)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
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