參數(shù)資料
型號： S1P2655A04
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： LINEAR INTEGRATED CIRCUIT
中文描述： 線性集成電路
文件頁數(shù)： 3/6頁
文件大?。?/td> 82K
代理商： S1P2655A04
LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
3
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Output Leakage Current
I
LK
V
CE
= 50V, Ta = 25
°
C, V
IN
= open
V
CE
= 50V, Ta = 70
°
C, V
IN
= open
V
CE
= 50V, Ta = 70
°
C,
V
IN
= 6.0V (S1P2655A02)
V
CE
= 50V, Ta = 70
°
C,
V
IN
= 1.0V (S1P2655A04)
I
C
= 100mA, I
IN
= 250
μ
A
I
C
= 200mA, I
IN
= 350
μ
A
I
C
= 350mA, I
IN
= 500
μ
A
I
C
= 500mA, Ta = 70
°
C
V
IN
V
IN
= 3.85V (S1P2655A03), Vo = open
V
IN
= 5V (S1P2655A04), Vo = open
V
IN
= 12V (S1P2655A04), Vo = open
V
IN
= 3.0V (S1P2655A05), Vo = open
V
CE
= 2.0V, Ic = 300mA (S1P2655A02)
V
CE
= 2.0V, Ic = 200mA (S1P2655A03)
V
CE
= 2.0V, Ic = 250mA (S1P2655A03)
V
CE
= 2.0V, Ic = 300mA (S1P2655A03)
V
CE
= 2.0V, Ic = 125mA (S1P2655A04)
V
CE
= 2.0V, Ic = 200mA (S1P2655A04)
V
CE
= 2.0V, Ic = 275mA (S1P2655A04)
V
CE
= 2.0V, Ic = 350mA (S1P2655A04)
V
CE
= 2.0V, Ic = 350mA (S1P2655A05)
V
CE
= 2.0V, Ic = 350mA (S1P2655A05)
50
μ
A
100
500
500
Output Saturation Voltage
Vsat
0.9
1.1
V
1.1
1.3
1.25
1.6
Input Current 1 (Off Condition)
I
IN 1
50
65
μ
A
Input Current 2 (On Condition)
I
IN 2
0.85
1.3
mA
0.93
1.35
0.35
0.5
1.0
1.45
1.5
2.4
Input Voltage
V
IN
13
V
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.4
DC Current Gain
h
FE
C
IN
t
ON
t
OFF
1000
Input Capacitance
15
30
pF
Proparation Delay Time
0.5 V
IN
to 0.5 Vo
0.5 V
IN
to 0.5 Vo
V
IN
= open, Vo = GND, V
R
= 50V, Ta =
25
°
C
0.25
1.0
μ
s
0.25
1.0
μ
s
Clamp Diode Leakage Current
I
R
50
μ
A
V
IN
= open, Vo = GND, V
R
= 50V, Ta =
70
°
C
100
μ
A
Clamp Diode Forward Voltage
V
F
I
F
= 350mA
1.7
2.0
V
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