參數(shù)資料
型號: S1MT/R7
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 111K
代理商: S1MT/R7
PAGE . 2
STAD-FEB.27.2009
1
S1A~S1M
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.4 MAXIMUM NON REPETITIVE PEAK SURGE CURRENT
Fig.5 TYPICAL JUNCTION CAPACITANCE
Fig.2 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
RATING AND CHARACTERISTIC CURVES
3
.0
2.0
1.0
0
50
100
150
0
.5
1.5
2.5
LEAD TEMPERATURE, C
o
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
REVERSE VOLTAGE, VOLTS
NO.OFCYCLES AT 60Hz
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.3 x 0.3"
(8.0 x 8.0mm) COPPER PAD A REAS
A
VERAGE
F
OR
W
A
RD
RECTIFIED
CURRENT
,AMPERES
INST
ANT
A
NEOUS
F
OR
W
A
RD
CURRENT
,AMPERES
PE
AK
FOR
W
ARD
S
URGE
C
URRE
NT
,
AM
PE
R
E
S
JUNCT
ION
C
AP
ACIT
AN
CE,p
F
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.6
T=25 C
Pulse Width=300us
2% Duty Cycle
J
O
15
20
25
30
10
5
0
1
2
610
20
40
60
100
0
0.1
1.0
100
1
2
5
10
20
50
100
T=25 C
f=1.0MHz
Vsig=50m VP.P
J
O
Fig.3-TYPICAL REVERSE CHARACTERISTIC
INST
ANT
A
NEOUS
REVERSE
CURRENT
Am
PERCENTAGE OF PEAK REVERSE VOLTAGE, %
0.01
20
40
60
80
100
120
140
0.1
1.0
10
100
T= 125 C
o
J
T= 100 C
J
o
T= 25 C
J
o
相關(guān)PDF資料
PDF描述
S1GT/R7 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA
S1JT/R7 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
S1BT/R13 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA
S1N3022 12 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-13
S1N3051A 200 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-13
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S1N070TLS4 制造商:ABB Low Voltage Products and Systems 功能描述:
S1N100TL 制造商:ABB Low Voltage Products and Systems 功能描述:
S1N100TLS4 制造商:ABB Low Voltage Products and Systems 功能描述:
S1NB05 制造商:DEC 制造商全稱:DEC 功能描述:1 AMP MINIATURE BRIDGE RECTIFIERS
S1NB05-S1NB100 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:Glass passivated chip junctions