參數資料
型號： S1MB-7-F
廠商： DIODES INC
元件分類： 二極管(射頻、小信號、開關、功率)
英文描述： 1 A, 1000 V, SILICON, SIGNAL DIODE
封裝： ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁數： 1/3頁
文件大?。?/td> 96K
代理商： S1MB-7-F
S1A/B - S1M/B
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction for High Reliability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Lead Free Finish/RoHS Compliant (Note 3)
Mechanical Data
Case: SMA/SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Lead Free Plating (Matte Tin Finish).
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking Information: See Page 3
Ordering Information: See Page 3
SMA Weight: 0.064 grams (approximate)
SMB Weight: 0.093 grams (approximate)
SMA
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.05
0.20
0.05
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.30
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DS16003 Rev. 17 - 2
1 of 3
www.diodes.com
S1A/B – S1M/B
Diodes Incorporated
Characteristic
Symbol
S1
A/AB
S1
B/BB
S1
D/DB
S1
G/GB
S1
J/JB
S1
K/KB
S1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TT = 100°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
1.1
V
Peak Reverse Leakage Current
@ TA = 25°C
at Rated DC Blocking Voltage
@ TA = 125°C
IRM
5.0
100
μA
Maximum Reverse Recovery Time (Note 4)
trr
3.0
μs
Typical Total Capacitance
(Note 1)
CT
10
pF
Typical Thermal Resistance, Junction to Terminal (Note 2)
RθJT
30
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to terminal, unit mounted on PC board with 5.0 mm
2 (0.013 mm thick) copper pads as heat sink.
3. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
相關PDF資料
PDF描述
S1M 1 A, 1000 V, SILICON, SIGNAL DIODE
S1D 1 A, 200 V, SILICON, SIGNAL DIODE
S1B 1 A, 100 V, SILICON, SIGNAL DIODE
S1A 1 A, 50 V, SILICON, SIGNAL DIODE
S1K 1 A, 800 V, SILICON, SIGNAL DIODE
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