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參數(shù)資料
| 型號(hào)： | S1M8656A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CDMA/AMPS Dual Mode IF/ baseband IC |
| 中文描述： | 碼分多址/ AMPS二元雙模式和IF /基帶IC |
| 文件頁數(shù)： | 9/26頁 |
| 文件大?。?/td> | 264K |
| 代理商： | S1M8656A |
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RX IF/BBA WITH AGC
S1M8656A
9
AC CHARACTERISTICS (Continued)
Characteristic
IF input frequency
range
Test Conditions
Symbol
Fin
Min
Typ
85.38
Max
150
Unit
MHz
The IF frequency is increased to find the
frequency where the gain falls below -3dB.
Input power = - 98dBm
Input power = - 75dBm
Input power = - 25dBm
AGC gain Max.
AGC gain Min.
ADC generated harmonic frequency
component. ADC generated Two signals in the
in-band are each mixed with signals which will
allow ADC to produce -7dB output signals.
The harmonic and non-harmonic components
of the ADC output signals between 1kHz –
20MHz are extracted and added. The AGC
control voltage is controlled so that ADC
output is full scale when the input signal is -
80dBm.
In-band spurious peak value produced by IMD
based on 2 jammer signals.
One in-band signal(@1kHz,0.5*F/S)
and two jammers(@60kHz, 22dB*F/S and
@122kHz, 4dB*F/S)are simultaneously input.
AGC control voltage is controlled so that ADC
output is F/S when the input signal is -80dBm.
Overall gain reduction due to one jammer.
The in-band signal at -93dBm (control the
AGC control voltage to 0.5*F/S)and the
jammer signal at 900kHz and -53dBm are
simultaneously input. The gain reduces if the
input/output range is small in BBA.
The leak ratio between the CDMA input and
FM input.
Amount of code change of the voltage ADC
output at the I/Q offset control
-
NFmin
NFmid
NFmax
IIP3max
IIP3min
TSpur
-
-
-
7
-
-
-
-
-
dB
dB
dB
dBm
dBm
dBc
Noise figure
20
70
-
-
-
IIP3
-55
-25
-
Spurious contents
-42
Spurious content
related to jammer
Jspur
-
-
-18.4
dBc
Single-tone
jammer desense
Jdsen
-
-
1.0
dB
Crosstalk CDMA
to FM
Offset gain slope
CTCF
30
-
-
dB
GOFS
250
%FS/V
Offset adjust input
impedance
Out-band
attenuation
I/Q gain mismatch
Zoff
100
-
-
k
≥
45kHz
≥
60MHz
Gain mismatch between the I and Q signals
between 1kHz to 12kHz.
ATC9
ATC12
Gmis
46
60
-1
-
-
-
-
1
dB
dB
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1M8656A01-E0T0 | CDMA/AMPS Dual Mode IF/ baseband IC |
| S1M8656A01-F0T0 | CDMA/AMPS Dual Mode IF/ baseband IC |
| S1M8657 | TX IF/BBA WITH AGC |
| S1M8657X01-E0T0 | TX IF/BBA WITH AGC |
| S1M8657X01-F0T0 | TX IF/BBA WITH AGC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1M8656A01-E0T0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CDMA/AMPS Dual Mode IF/ baseband IC |
| S1M8656A01-F0T0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CDMA/AMPS Dual Mode IF/ baseband IC |
| S1M8657 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:TX IF/BBA WITH AGC |
| S1M8657X01-E0T0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:TX IF/BBA WITH AGC |
| S1M8657X01-F0T0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:TX IF/BBA WITH AGC |
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