參數(shù)資料
型號(hào): S1K-HE3
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: LEAD FREE, PLASTIC, SMA, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 344K
代理商: S1K-HE3
S1A thru S1M
Document Number 88711
06-Sep-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.4
0.8
1.2
1.6
2.0
0.01
0.1
10
1
80
Instantaneo
u
sF
o
rw
ard
C
u
rrent
(A)
InstantaneousForward Voltage (V)
TJ = 25 °C
Pulse Width = 300 s
1% Duty Cycle
020
60
40
100
80
0.01
0.001
0.1
10
1
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.1
0.01
1
10
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
t, Pulse Duration (sec.)
T
ransient
T
her
mal
Impedance
(
°C
/W
)
0.1
0.01
1
10
100
1000
10
1
Units Mounted on
0.20 x 0.20" (5.0 x 5.0mm)
x 0.5 mil. Inches (0.013mm)
Thick Copper Land Areas
S1(K,M)
S1(A-J)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
相關(guān)PDF資料
PDF描述
S1J-E3 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
S1A-E3 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
S1K 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
S1D-HE3 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
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