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參數(shù)資料
| 型號(hào)： | S1JHE3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | S1JHE3/61T |
S1A thru S1M
Vishay General Semiconductor
Document Number: 88711
Revision: 07-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0.4
100
1.6
2.0
0.8
1.2
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rretn
(A)
10
1
0.1
0.01
020
60
40
100
80
0.01
0.001
0.1
10
1
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.1
0.01
1
10
100
10
1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
t - Pulse Duration (s)
Transient
Thermal
Impedance
(°C/
W
)
0.1
0.01
1
10
100
1000
10
1
Units Mounted on
0.20 x 0.20" (5.0 x 5.0 mm)
x 0.5 mil. Inches (0.013 mm)
Thick Copper Land Areas
S1(K, M)
S1(A - J)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1K-HE3/5AT | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1B-LT | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1J-LT | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1D-LT | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1M-LT | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1JHE3A/H | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Glass Passivated Rectifier |
| S1JHE3-A/H | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Glass Passivated Rectifier |
| S1JHE3A/I | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Glass Passivated Rectifier |
| S1JHE3A-I | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Glass Passivated Rectifier |
| S1JL | 功能描述:整流器 1A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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