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參數資料
| 型號： | S1BA-E3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | S1BA-E3/61T |
Document Number: 88968
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Standard Surface Mount Glass Passivated Rectifier
S1BA thru S1MA
Vishay General Semiconductor
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for consumer
and telecommunication.
Note
These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V to 1000 V
IFSM
30 A
IR
3.0 μA
VF at IF = 1.0 A
0.861 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1BA
S1DA
S1GA
S1JA
S1KA
S1MA
UNIT
Device marking code
BA
DA
GA
JA
KA
MA
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
1000
V
Average forward current
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage
IF = 1.0 A
TJ = 25 °C
VF (1)
0.960
1.1
V
TJ = 125 °C
0.861
-
Reverse current
Rated VR
TJ = 25 °C
IR (2)
0.09
3
μA
TJ = 125 °C
20
80
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.0
-
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
8-
pF
相關PDF資料 |
PDF描述 |
|---|---|
| S1GA-E3/5AT | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1KA-E3/5AT | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1MA-E3/5AT | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1JA-E3/61T | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1MA-E3/61T | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S1BB | 功能描述:整流器 1A,100V,Glass Pass SMB Rect RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1BB13 | 制造商:Diodes Incorporated 功能描述: |
| S1BB-13 | 功能描述:整流器 100V 1A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1BB-13-F | 功能描述:整流器 100V 1A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1B-CUT TAPE | 制造商:Fairchild 功能描述:S1B Series 1.1 V 1 A 100 V Max Reverse Voltage Standard Rectifier-DO-214AC |
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