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參數(shù)資料
| 型號： | S1A2209A01 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DUAL LOW VOLTAGE POWER AMP |
| 中文描述： | 雙低電壓功率放大器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | S1A2209A01 |
S1A2209A01
DUAL LOW VOLTAGE POWER AMP
2
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, Vcc = 6V, f = 1kHz, unless otherwise specified)
Characteristic
Symbol
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
I
PK
15
V
Output Peak Current
1
A
Power Dissipation
P
D
at T
AMB
= 50
°
C 1.0
at T
CASE
= 50
°
C 1.4
20 — + 70
W
Operating Temperature
T
OPR
T
STG
°
C
Storage Temperature
40 — +150
°
C
Test Conditions
Min.
Typ.
Max.
Unit
Operating Voltage
Vcc
1.8
9
V
Quiescent Circuit Current
I
CCQ
V
I
= 0
Stereo
6
mA
Closed Loop Voltage
Gain
Gvc
40
dB
Bridge
40
dB
Channel Balance
C
B
Stereo
1
0
1
dB
Output Power
P
O
Stereo
V
CC
= 6V, R
L
= 4
, THD=10%
V
CC
= 3V, R
L
= 4
, THD=10%
V
CC
= 6V, R
L
= 8
, THD=10%
V
CC
= 3V, R
L
= 4
, THD=10%
Stereo, R
L
= 8
, P
O
= 0.2W
Bridge, R
L
= 8
, P
O
= 0.5W
Stereo, f =100Hz, C
3
= 100uF
Stereo, BW (-3dB) = 20Hz — 20kHz
0.4
0.65
W
0.11
W
Bridge
0.9
1.35
W
0.35
W
Total Harmonic Distortion
THD
0.3
%
0.2
%
Ripple Rejection Ratio
RR
24
30
dB
Output Noise Voltage
V
NO
CT
0.5
2.0
mV
Cross Talk
Stereo, f = 1kHz
50
dB
Input Resistance
R
I
100
k
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| S1A2209A01-D0B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL LOW VOLTAGE POWER AMP |
| S1A2209A01-S0B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL LOW VOLTAGE POWER AMP |
| S1A2221A02 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL LOW NOISE EQUALIZER AMPLIFIER |
| S1A2221A02-I0U0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL LOW NOISE EQUALIZER AMPLIFIER |
| S1A2224A01 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL EQ AMP WITH ALC |
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