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參數(shù)資料
| 型號： | S1A0497X01-S0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FM FRONT END |
| 中文描述： | 調(diào)頻前端 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 174K |
| 代理商： | S1A0497X01-S0B0 |
S1A0497X01
FM FRONT END
8
APPLICATION INFORMATION
RF AMP
The RF AMP is a common base type, so the operating frequency range is improved. The GND of the bypass
capacitor (Pin 2) should be located closely at Pin 5 (GND). When using the bypass capacitor at V
CC
-line of Pin 3.
We can expect an improvement of the S/N ratio.
MIXER
The mixer stage uses a double balanced type in order to protect the leakage of OSC, spurious radiation.
Also, this is built into the limiter in order to improve the strong input characteristic.
B. P. F
FM ANT
75
75
1
2
3
BIAS
V
CC
1000p
15p
T1
V
CC
IF AMP
V
CC
OSC OUT
BIAS
MIX OUT
MIX
IN
6
4
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