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參數(shù)資料
| 型號： | S1A0426C02 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | AM/FM 1 CHIP RADIO |
| 中文描述： | 調(diào)幅/調(diào)頻收音機(jī)芯片1 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 70K |
| 代理商： | S1A0426C02 |
AM/FM 1 CHIP RADIO
S1A0426C02
3
ELECTRICAL CHARACTERISTICS
(V
CC
= 6 V,
Ta = 25
°
C, FM;
f = 22.5 kHz, fm = 1 kHz, AM; 30% Mod, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
FM
Quiescent Circuit Current
I
CCQ
(1)
G
V
(1)
V
O
(1)
V
I (LIM)
V
I
= 0
V
I
(1) = 40dB
μ
, fc = 100MHz,
f = 0
V
I
(3) = 90dB
μ
, fi = 10.7MHz
Vo(VI3) = 90dB
μ
,
3dB, fi = 10.7MHz
7.0
14.0
mA
F/E Voltage Gain
32
39
46
dB
μ
Detect Output Gain
26
20
14
dBm
IF-3 dB Sensitivity
24
32
dB
Total Harmonic Distortion
THD
1
V
I
(3) = 90dB
μ
, fi = 10.7MHz
(
f = 75kHz)
0.3
2.0
%
Meter Drive Current
I
M
(1)
I
CCQ
(2)
G
V
(2)
G
V
(3)
V
O
(2)
THD
2
I
M
(2)
G
V
(4)
THD
3
P
O
V
I
(3) = 60dB
μ
, fi = 10.7MHz
V
I
= 0
V
I
(2) = 60dB
μ
, fc = 1660kHz, m = 0%
Vo(3) =
34dBm, fi = 455kHz
1.8
3.5
7.0
mA
AM
Quiescent Circuit Current
3.5
10.0
mA
F/E Voltage Gain
15
22
29
dB
IF Voltage Gain
14
20
27
dB
μ
AM Detect Output Voltage
V
I
(3) = 85dB
μ
, fi = 455kHz
V
I
(2) = 95dB
μ
, fc = 1660kHz, Vcc = 7.8V
V
I
(3) = 85dB
μ
, fi = 455kHz
Vo(4) = 0dBm, f = 1kHz
26
20
14
dBm
Total Harmonic Distortion
0.6
2.0
%
Meter Drive Current
1.3
3.0
7.0
mA
AF
Closed Loop Voltage Gain
27
31.5
36
dB
Total Harmonic Distortion
Po = 50mW, f = 1kHz
0.3
2.5
%
Output Power
R
L
= 8
, THD = 10%, f = 1kHz
Po = mW, Vi(4) = 30dBm
1kHz, V1(3) = FF
0.4
0.5
W
Mute Level
M
L
8
15
22
dB
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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