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參數(shù)資料
| 型號(hào)： | S1A0426C01-A0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | AM/FM 1 CHIP RADIO |
| 中文描述： | 調(diào)幅/調(diào)頻收音機(jī)芯片1 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | S1A0426C01-A0B0 |
AM/FM 1 CHIP RADIO
S1A0426C01
3
ELECTRICAL CHARACTERISTICS
(V
CC
= 6V,
Ta = 25
°
C, FM;
f = 22.5kHz, fm = 1kHz, AM; 30% Mod, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min.
Typ. Max.
Unit
FM
Quiescent Circuit Current
I
CCQ
G
V1V
V
O
(1)
V
I (LIM)
THD
1
I
M
(1)
I
CCQ
(2)
G
V
(2)
G
V
(3)
V
O
(2)
THD
2
I
M
(2)
G
V
(4)
THD
3
P
O
V
I
= 0
V
I
(1) = 40dB
μ
, f
c
= 100MHz,
f = 0
V
I
(3) = 90dB
μ
, f
i
= 10.7MHz
Vo(VI3) = 90dB
μ
, -3dB, f
i
= 10.7MHz
V
I
(3) = 90dB
μ
, f
i
= 10.7MHz(
f = 75kHz)
V
I
(3) = 60dB
μ
, f
i
= 10.7MHz
V
I
= 0
V
I
(2) = 60dB
μ
, f
c
= 1660kHz, m=0%
Vo(3) = -34dBm, f
i
= 455kHz
V
I
(3) = 85dB
μ
, f
i
= 455kHz
V
I
(2) = 95dB
μ
, f
c
= 1660kHz, Vcc = 7.8V
V
I
(3) = 85dB
μ
, f
i
= 455kHz
Vo(4) = 0dBm, f = 1kHz
7.0
14.0
mA
F/E Voltage Gain
32
39
46
dB
Detect Output Gain
26
20
14
dBm
IF-3 dB Sensitivity
24
32
dB
μ
Total Harmonic Distortion
0.3
2.0
%
Meter Drive Current
1.8
3.5
7.0
mA
AM
Quiescent Circuit Current
3.5
10.0
mA
F/E Voltage Gain
15
22
29
dB
IF Voltage Gain
14
20
27
dB
μ
AM Detect Output Voltage
26
20
14
dBm
Total Harmonic Distortion
0.6
2.0
%
Meter Drive Current
1.3
3.0
7.0
mA
AF
Closed Loop Voltage Gain
27
31.5
36
dB
Total Harmonic Distortion
Po = 50mW, f = 1kHz
0.3
2.5
%
Output Power
R
L
= 8
, THD = 10%, f = 1kHz
0.4
0.5
W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1A0426C01-S0B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:AM/FM 1 CHIP RADIO |
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