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參數(shù)資料
| 型號(hào)： | S1A0136A01 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
| 中文描述： | 雙預(yù)功率音量控制器放大器 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | S1A0136A01 |
DUAL PRE-POWER AMP WITH VOLUME CONTROLLER
S1
A0136A01
3
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, V
CC
= 3V, unless otherwise specified)
Characteristic
PRE AMPLIFIER SECTION
(V
CC
= 3V, f = 1kHz, R
L1
= 10k
,
unless otherwise specified)
Characteristic
POWER AMPLIFIER SECTION
(Ta = 25
°
C, V
CC
= 3V, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Quiescent Circuit Current
I
CCQ
V
CC
= 3V, V
I
= 0, I
M
= 0
18
mA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Open Loop Voltage Gain
G
VO
V
O
=
10dBm, R
L
=
∞
70
dB
Closed Loop Voltage Gain
G
VC1
V
O
=
10dBm
40
42
44
dB
Output Voltage
V
O
THD
THD = 1%
0.45
0.6
V
Total Harmonic Distortion
V
O
= 0.2V
0.05
0.5
%
Output Noise Voltage
V
NO1
V
i
= 0, R
g
= 2.2k
,
BPF(30
20kHz)
150
300
μ
V
Input Resistance
R
I
V
O
= 10dBm
18
22
k
Cross Talk
CT
1
R
G
= 2.2k
, V
O
=
10dBm
30
dB
Output Voltage In Pre OFF
V
O (OFF)
V
I
= 100mV
Pre OFF (pin 22) = V
CC
50
dB
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Closed Loop Voltage Gain
G
VC2
P
O
= 5mW
26
28
30
dB
Voltage Gain Difference
G
V
V
CONT
= Max
0
3
dB
Output Power 1
P
O1
THD = 10%, R
L
= 32
20
28
mW
Output Power 2
P
O2
THD = 10%, R
L
= 16
30
mW
Total Harmonic Distortion
THD
2
P
O
= 5mW
0.2
2.0
%
Pre+ Power Output Noise Voltage
V
NO2I
V
I
= 0, R
G
= 2.2k
, V
CONT
= Max
6
10
mV
Output Noise Voltage
V
NO3I
R
G
= 2.2 k
, V
CONT
= Min
0.25
1.0
mV
Cross Talk
CT
2
R
o
= 5mW
20
30
dB
Ripple Rejection Ratio
RR
V
CC
= 3V, 100Hz, 100mVp-p
34
40
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1A0136A01-A0B0 | DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
| S1A0136A01-S0B0 | DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
| S1A0211X01 | Cable; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| S1A0211X01-I0U0 | Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Tefzel; Leaded Process Compatible:Yes; Temperature Max:150 C; Voltage Nom.:600V RoHS Compliant: Yes |
| S1A0234B01-Y0B0 | 5 BAND DUAL GRAPHIC EQ AMP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1A0136A01-A0B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
| S1A0136A01-S0B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
| S1A0211X01 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL LOW NOISE EQ AMP |
| S1A0211X01-I0U0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DUAL LOW NOISE EQ AMP |
| S1A0234B01 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:5 BAND DUAL GRAPHIC EQ AMP |
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