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參數(shù)資料
| 型號： | S1A-M3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 75K |
| 代理商： | S1A-M3/61T |
Document Number: 89272
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A thru S1M
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0.4
100
1.6
2.0
0.8
1.2
Instantaneous Forward Voltage (V)
Instantaneous
F
o
rw
ard
Current
(A)
10
1
0.1
0.01
020
60
40
100
80
0.01
0.001
0.1
10
1
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous
Re
v
e
rse
Leakage
Current
(A)
Reverse Voltage (V)
Junction
Capacitance
(pF)
0.1
0.01
1
10
100
10
1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
t - Pulse Duration (s)
Transient
Thermal
Impedance
(°C/W)
0.1
0.01
1
10
100
1000
10
1
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
S1A thru S1J
S1K, S1M
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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