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參數(shù)資料
| 型號(hào)： | S1A-HE3/5AT |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | S1A-HE3/5AT |
S1A thru S1M
Vishay General Semiconductor
Document Number: 88711
Revision: 07-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0.4
100
1.6
2.0
0.8
1.2
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rretn
(A)
10
1
0.1
0.01
020
60
40
100
80
0.01
0.001
0.1
10
1
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.1
0.01
1
10
100
10
1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
t - Pulse Duration (s)
Transient
Thermal
Impedance
(°C/
W
)
0.1
0.01
1
10
100
1000
10
1
Units Mounted on
0.20 x 0.20" (5.0 x 5.0 mm)
x 0.5 mil. Inches (0.013 mm)
Thick Copper Land Areas
S1(K, M)
S1(A - J)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1B-HE3/61T | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1G-E3/61T | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1K-E3/5AT | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1G-HE3/61T | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1A-HE3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1AJ | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:smaj REVERSE VOLTAGE: 50 - 1000 VCURRENT: 1.0 A |
| S1AL | 功能描述:撥動(dòng)開(kāi)關(guān) SPDT ON None ON RoHS:否 制造商:C&K Components 觸點(diǎn)形式:DPDT 開(kāi)關(guān)功能:ON - ON - ON 電流額定值: 電壓額定值 AC:20 V 電壓額定值 DC:20 V 功率額定值:0.4 VA 端接類(lèi)型:V-Bracket 安裝風(fēng)格: 端子密封:Epoxy 觸點(diǎn)電鍍:Gold 照明:Not Illuminated |
| S-1AL | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述: |
| S1A-L | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:1 Amp Silicon Rectifier 50 to 1000 Volts |
| S1AL R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 50V 1.5A 2-Pin Sub SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 50V 1.5A 2-Pin Sub SMA T/R |
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