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參數(shù)資料
| 型號(hào)： | S186P |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 73K |
| 代理商： | S186P |
S186P
Document Number 81536
Rev. 1.5, 27-Nov-06
Vishay Semiconductors
www.vishay.com
1
94 8632
Silicon PIN Photodiode
Description
S186P is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
GaAs or GaAs on GaAlAs IR emitters (
λ
p ≥ 900 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
Fast response times
Small junction capacitance
High radiant sensitivity
Large radiant sensitive area A = 7.5 mm2
Wide angle of half sensitivity
= ± 65°
Plastic case with IR filter (950 mm)
Suitable for near infrared radiation
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
e4
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
60
V
Power Dissipation
Tamb ≤ 25 °C
PV
215
mW
Junction Temperature
Tj
100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Soldering Temperature
t
≤ 5 s
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
350
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Breakdown Voltage
IR = 100 μA, E = 0
V(BR)
60
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
230
nA
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25
40
pF
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