參數(shù)資料
型號: S186
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon PIN Photodiode
中文描述: 硅PIN光電二極管
文件頁數(shù): 2/5頁
文件大?。?/td> 72K
代理商: S186
S186P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81536
Basic Characteristics
T
amb
= 25 C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
I
R
= 100 A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
Symbol
V
(BR)
I
ro
C
D
C
D
V
o
I
k
I
ra
Min
60
Typ
Max
Unit
V
nA
pF
pF
mV
A
A
2
70
25
350
38
45
30
40
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
43
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
±
65
950
deg
nm
nm
W/
Hz
ns
p
0.5
870...1050
4x10
–14
100
V
R
= 20 V, = 950 nm
V
R
= 10 V, R
L
= 1 k ,
= 820 nm
V
R
= 10 V, R
L
= 1 k ,
= 820 nm
NEP
t
r
Fall Time
t
f
100
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
r
T
amb
– Ambient Temperature (
°
C )
100
94 8403
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
100
94 8409
V
R
=5V
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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