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參數(shù)資料
| 型號： | S1722-02 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Large area, high-speed PIN photodiodes for UV to near IR photometry |
| 中文描述： | 硅PIN光電二極管大面積，高速PIN光電二極管的紫外到近紅外的速度光度法 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 99K |
| 代理商： | S1722-02 |
Si PIN photodiode
S1722-02, S1723-05
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
6
Hamamatsu Photonics K.K.
Cat. No. KPIN1045E03
Aug. 2006
DN
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
1
ACTIVE AREA
2
1
1
0
15.1 ± 0.3
12.5 ± 0.2
1
0
1
5
2
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
CASE
0
1.0 MAX.
INDEX MARK
1.4
The glass window may extend a
maximum of 0.3 mm above the
upper surface of the cap.
KPINA0027EC
S1722-02
I
Spectral response
0.7
KPINB0181EA
I
Photo sensitivity temperature characteristic
KPINB0182EA
I
Dark current vs. reverse voltage
KPINB0183EA
I
Terminal capacitance vs. reverse voltage
KPINB0184EA
I
Dimensional outlines (unit: mm)
KPINA0077EA
S1723-05
0.1
190
400
600
800
1000
0.3
0.2
(Typ. Ta
=
25 C)
0.4
0.5
0.6
P
WAVELENGTH (nm)
T
C
190
400
600
800
1000
WAVELENGTH (nm)
0
+0.5
+1.0
-0.5
+1.5
REVERSE VOLTAGE (V)
D
1 pA
0.01
0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25
C)
S1722-02
S1723-05
S1722-02
S1723-05
(Typ. Ta=25
C, f=1 MHz)
REVERSE VOLTAGE (V)
T
1 pF
0.1
1
10
100
10 pF
100 pF
10 nF
1 nF
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