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參數(shù)資料
| 型號(hào)： | S153 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode |
| 中文描述： | 硅PIN光電二極管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | S153 |
S153P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81535
Basic Characteristics
T
amb
= 25 C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
I
R
= 100 A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
= 950 nm
E
A
= 1 klx
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
V
R
= 5 V, = 900 nm
Symbol
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
I
k
Min
50
Typ
Max
Unit
V
nA
pF
pF
mV
mV/K
A
A
2
75
25
350
–2.6
80
47
30
40
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Temp. Coefficient of I
k
Reverse Light Current
TK
Ik
I
ra
I
ra
0.18
85
50
%/K
A
A
40
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
s( )
0.6
±
55
900
A/W
deg
nm
nm
W/
√
Hz
ns
p
0.5
600...1050
4.2x10
–14
100
V
R
= 10 V, = 950 nm
V
R
= 10 V, R
L
= 1 k ,
= 820 nm
V
R
= 10 V, R
L
= 1 k ,
= 820 nm
NEP
t
r
Fall Time
t
f
100
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
40
T
amb
– Ambient Temperature (
°
C )
60
80
120
100
20
I
r
94 8463
10
0
10
1
10
2
10
3
10
4
10
5
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0.8
1.0
1.2
1.5
1.3
1.4
1.1
0.9
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
120
100
I
r
94 8464
V
R
=5V
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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