參數(shù)資料
型號: S14C05-8
廠商: SENSITRON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 300 W, BIDIRECTIONAL, 10 ELEMENT, SILICON, TVS DIODE
封裝: SO-14
文件頁數(shù): 2/3頁
文件大?。?/td> 86K
代理商: S14C05-8
S14C03-8
thru
S14C24-8
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1915, REV. -
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
Page 2
ELECTRICAL CHARACTERISTICS @ 25
°C
Part Number
Stand-off
Voltage
Vwm
(v)
Max
Breakdown
Voltage
VBR
@1mA
(V)
Min
Clamping
Voltage
Vc
@ 1 A
(V)
Max
Leakage
Current
IR
@ Vwm
(
A)
Max
Capacitance
(f = 1MHz)
C
@ 0V
(pF)
Max
Temperature
Coefficient
of VBR
a(VBR)
mv/
°C
Max
S14C03-8
3.3
4
7
200
300
-5
S14C05-8
5.0
6
9.8
40
200
1
S14C12-8
12.0
13.3
19
1
75
8
S14C15-8
15.0
16.7
24
1
50
11
S14C24-8
24.0
26.7
43
1
35
28
PACKAGE OUTLINES & DEMENSIONS
INCHES
MILLIMETERS
DIM
MIN.
MAX
MIN.
MAX.
A
0.337
0.344
8.55
8.75
B
0.150
0.157
3.8
4.0
C
0.053
0.069
1.35
1.75
D
0.011
0.021
0.28
0.53
F
0.016
0.050
0.41
1.27
G
0.050 BSC
1.27 BSC
J
0.006
0.010
0.15
0.25
K
0.004
0.010
0.10
0.25
L
0.189
0.206
4.80
5.23
P
0.228
0.244
5.79
6.19
TYPICAL CHARACTERISTICS
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (
s)
Percent
of
I
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8
s
td = 20
s
Figure 1. Peak Pulse Power Vs Pulse Time (
s)
Figure 2. Pulse Wave Form
Time (
s)
10000
1000
100
10
.1
1
10
100
1000
10000
8/20s 300W Pulse
相關(guān)PDF資料
PDF描述
S1603-8 300 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
S1615-8 300 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
S16BSD2 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
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