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參數(shù)資料
| 型號： | S1337-16BQ |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 135K |
| 代理商： | S1337-16BQ |
Si photodiode
S1337 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2004 Hamamatsu Photonics K.K.
10.1 ± 0.1
8.9
±
0.1
ACTIVE AREA
0.1
2.0
±
0.1
10.5
0.85
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
10.1 ± 0.1
8.9
±
0.1
ACTIVE AREA
2.0
±
0.1
10.5
0.75
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
Cat. No. KSPD1032E03
Jul. 2004 DN
KSPDA0109EA
KSPDA0110EA
KSPDA0111EA
KSPDA0112EA
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0
±
0.15
ACTIVE AREA
2.15
±
0.1
10.5
1.0
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7
±
0.3
0.1
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0
±
0.15
ACTIVE AREA
2.15
±
0.1
10.5
0.9
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7
±
0.3
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
S1337-66BQ
S1337-66BR
S1337-1010BR
S1337-1010BQ
4
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| S1337-1010BR | PHOTO DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| S1337-16BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-33BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-33BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-66BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-66BR | 制造商:Hamamatsu Photonics 功能描述:Bulk |
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