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參數(shù)資料
| 型號： | S1337-1010BQ |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For UV to IR, precision photometry |
| 中文描述： | 硅光電二極管對紫外線，紅外線，精密光度法 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 142K |
| 代理商： | S1337-1010BQ |
Si photodiode
S1337 series
KSPDA0105EA
I
Dimensional outlines (unit: mm)
8.5 ± 0.2
2
0
1
6
ANODE TERMINAL MARK
0.5
LEAD
12.2
13.5 ± 0.13
15 ± 0.15
0
ACTIVE AREA
HOLE
(2
×
) 0.8
PHOTOSENSITIVE
SURFACE
KSPDA0106EA
8.5 ± 0.2
2
1
6
ANODE TERMINAL MARK
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
13.5 ± 0.13
15 ± 0.15
0
ACTIVE AREA
HOLE
(2
×
) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
KSPDA0107EA
KSPDA0108EA
7.6 ± 0.1
6
ACTIVE AREA
0
2
1
0
0
4.5 ± 0.2
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
6.6 ± 0.3
5
7.6 ± 0.1
6
ACTIVE AREA
2
1
0
0
6.6 ± 0.3
4.5 ± 0.2
5
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
S1337-16BQ
S1337-16BR
S1337-33BR
S1337-33BQ
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1337-1010BR | Si photodiode For UV to IR, precision photometry |
| S1337-16BR | Si photodiode For UV to IR, precision photometry |
| S1337-33BQ | Si photodiode For UV to IR, precision photometry |
| S1337-33BR | Si photodiode For UV to IR, precision photometry |
| S1337-66BQ | Si photodiode For UV to IR, precision photometry |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1337-1010BR | 制造商:HAMAMATSU 功能描述:PHOTODIODE 960NM |
| S1337-16BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-16BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-33BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-33BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
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