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參數(shù)資料
| 型號(hào)： | S1226-44BQ |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | SI PHOTO DIODE |
| 中文描述： | 硅光電二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 225K |
| 代理商： | S1226-44BQ |
Si photodiode
S1226 series
R
LOAD RESISTANCE (
)
(Typ. Ta
=
25 C, V
R
=
0 V)
10
2
10 ns
10
3
10
4
10
5
S1226-18BQ/BK
S1226-5BQ/BK
S1226-8BQ/BK
S1226-44BQ/BK
100 ns
1
μ
s
10
μ
s
100
μ
s
1 ms
I
Spectral response
I
Photo sensitivity temperature characteristic
KSPDB0106EA
KSPDB0030EA
I
Rise time vs. load resistance
I
Dark current vs. reverse voltage
KSPDB0107EA
KSPDB0108EA
0.1
0
P
190
400
600
800
1000
WAVELENGTH (nm)
0.3
0.2
(Typ. Ta =25
C)
0.4
0.5
0.6
0.7
S1226-BQ
S1226-BK
T
C
WAVELENGTH (nm)
(Typ. )
0
190
400
600
800
1000
+1.0
+0.5
+1.5
-0.5
D
REVERSE VOLTAGE (V)
(Typ. Ta
=
25
C)
0.01
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
S1226-8BQ/BK
S1226-5BQ/BK, -18BQ/BK
S1226-44BQ/BK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1226-5BK | SI PHOTO DIODE |
| S1226-5BQ | SI PHOTO DIODE |
| S1226-8BK | SI PHOTO DIODE |
| S1226-8BQ | SI PHOTO DIODE |
| S1236 | TRIANGULAR TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1226-5BK | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1226-5BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1226-8BK | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1226-8BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1227 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
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