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參數(shù)資料
| 型號(hào)： | S1226-18BK |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | SI PHOTO DIODE |
| 中文描述： | 硅光電二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | S1226-18BK |
Features
l
High UV sensitivity: QE 75 % (
λ
=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
l
High reliability
Applications
l
Analytical equipment
l
Optical measurement equipment, etc.
P H O T O D I O D E
Si photodiode
S1226 series
For UV to visible, precision photometry; suppressed IR sensitivity
I
General ratings / absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
-20 to +60
-40 to +100
-20 to +60
-40 to +100
-20 to +60
-40 to +100
-20 to +60
-40 to +100
Package
Active
area size
Effective
active area
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
-55 to +80
-55 to +125
-55 to +80
-55 to +125
-55 to +80
-55 to +125
-55 to +80
-55 to +125
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
/Q
/K
/Q
/K
/Q
/K
/Q
/K
TO-18
1.1 × 1.1
1.2
2.4 × 2.4
5.7
TO-5
3.6 × 3.6
13
TO-8
5.8 × 5.8
33
5
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
sensi-
tivity
wave-
length
λ
p
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100
lx
Spectral
response
range
λ
λ
p
200 nm
He-Ne
laser
Min. Typ.
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coeffi-
cient
of I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capaci-
tance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm)
(nm)
Min. Typ. 633 nm(μA) (μA)
0.10 0.12
-
-
0.10 0.12
-
-
0.10 0.12
-
-
0.10 0.12
-
-
(pA)
(times/° C)
(μs)
(pF)
Min.
(G
)
Typ.
(G
)
(W/Hz
1/2
)
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
* Window material, K: borosilicate glass, Q: quartz glass
190 to 1000
320 to 1000
190 to 1000
320 to 1000
190 to 1000
320 to 1000
190 to 1000
320 to 1000
0.5
0.66
2
0.15
35
5
50 1.6 × 10
-15
2.2
2.9
5
0.5
160
2
20 2.5 × 10
-15
4.4
5.9
10
1
380
1
10 3.6 × 10
-15
720
0.36
0.34
12
16
20
1.12
2
950
0.5 5 5.0 × 10
-15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1226-18BQ | SI PHOTO DIODE |
| S1226-44BK | SI PHOTO DIODE |
| S1226-44BQ | SI PHOTO DIODE |
| S1226-5BK | SI PHOTO DIODE |
| S1226-5BQ | SI PHOTO DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1226-18BQ | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1226-18BU | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For high power UV monitor, and UV to visible, precision photometry |
| S1226-44BK | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1226-44BQ | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1226-5BK | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
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