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參數(shù)資料
| 型號： | S1200 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POSITION SENSITIVE DETECTOR |
| 中文描述： | 位置靈敏探測器 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 1289K |
| 代理商： | S1200 |
11
Photocurrent saturation must be taken into account when a
PSD is used outdoors, in locations where the background
light level is high, or the signal light amount is extremely
large. Figure 7-1 shows typical photocurrent output of a
PSD in a non-saturated state. This PSD is operating nor-
mally with good output linearity over the entire active area.
If the background light level is excessively high or the sig-
nal light amount is extremely large, the PSD photocurrent
will saturate. A typical output from a saturated PSD is
shown in Figure 7-2. The output linearity of the PSD is im-
paired so the correct position cannot be detected in this
case.
Photocurrent saturation of a PSD depends on the interelec-
trode resistance and reverse voltage, as shown in Figure 7-
3. The saturated photocurrent is measured as the total
photocurrent of a PSD when the entire active area is illumi-
nated. If a small spot light is focused on the active area, the
photocurrent that is generated is concentrated only on a lo-
calized portion, so saturation occurs at a lower level.
To avoid the saturation effect, use the following methods.
·
Reduce the background light level by using an optical filter.
·
Use a PSD with a small active area.
·
Increase the reverse voltage.
·
Decrease the interelectrode resistance.
·
Avoid concentrating the light beam on a small area.
Figure 7-1 Photocurrent output example of PSD in
normal operation (S5629)
Figure 7-3 Saturation photocurrent vs. interelectrode resistance
(entire active area fully illuminated)
KPSDB0085EA
KPSDB0086EA
Figure 7-2 Photocurrent output example of saturated
PSD (S5629)
Characteristic and use
7. Saturation photocurrent
KPSDB0087EA
INCIDENT POSITION (mm)
(Ta=25
C)
R
-2
-4
0
20
40
120
100
80
60
0
2
-1
-3
1
3
4
I
X1
I
X2
I
X1
+ I
X2
CENTER OF
ELECTRICITY
INCIDENT POSITION (mm)
(Ta=25
C)
R
-2
-4
0
20
40
120
100
80
60
0
2
-1
-3
1
3
4
I
X1
I
X2
I
X1
+ I
X2
I
X2
CENTER OF
ELECTRICITY
INTERELECTRODE RESISTANCE (k
)
(Typ. Ta=25
C)
100
10
0.01
0.1
10
1
1000
S
V
R
=5 V
V
R
=2 V
V
R
=1 V
V
R
=0 V
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| S-1200B15-M5T1G | 功能描述:低壓差穩(wěn)壓器 - LDO Linear LDO Reg Hi 18uA Iq 150mA Iout RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
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