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參數(shù)資料
| 型號(hào)： | S10128 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 2; Condition IF at rf (mA): 2; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: EFP |
| 中文描述： | 防治荒漠化領(lǐng)域的圖像傳感器前端照明傅里葉變換的CCD用于X射線成像 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | S10128 |
CCD area image sensor
S8986, S10128
KMPDC0219EB
P1V
P2V, TG *
17
P1H
P2H, SG
RG
OUT
P2V, TG
P1H
P2H, SG
RG
OUT
Tpwv
1
VD1
2, 3, ... , 1199, 1200, VD2
VD: VERTICAL DUMMY
ENLARGED VIEW
Tovr
Tpwh, Tpws
Tpwr
D1
D2
S1
S2, S3, S4, ... , S1702, S1703, S1704
D3
D4
Trigger B (S10128) *
16
PRE-INTEGRATION PERIOD
INTEGRATION PERIOD
READOUT PERIOD
AC X-RAY EXPOSURE (Trigger A) *
15
DC X-RAY EXPOSURE (Trigger A) *
15
*15: Trigger A (S8986) is the same as AC/DC X-ray exposure form.
*16: Low active trigger pulse
*17: TG terminal can be short-circuited to P2V terminal.
4
Parameter
Symbol
tpwv
tprv, tpfv
tpwh
tprh, tpfh
Remark
*
18
Min.
30
200
100
5
-
100
3
-
10
3
18
Typ.
60
-
500
-
50
500
-
50
50
-
36
Max.
-
-
-
-
-
-
-
-
-
-
-
Unit
μs
ns
ns
ns
%
ns
ns
%
ns
ns
μs
Pulse width
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
P1V, P2V, TG
*
18
P1H, P2H
tpws
tprs, tpfs
SG
tpwr
tprr, tpfr
tovr
RG
TG-P1H
*18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
I
On-board circuit
P1V
OD
RD
Vcc
P2V
TG
P1H
P2H
SG
RG
P1V
’
51 k
2.2 μ
2.2 μ
7.5 k
10 k
molex 52745-1417
0.1 μ
P2V
’
TG
’
P1H
’
SS
CCD CHIP
OD
OG
RD
OS
PD
100
10
10
10
10
10
10
P2H
’
SG
’
RG
’
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
OUT
Trigger A
(S8986)
Trigger B
(S10128)
GND
KMPDC0218EC
KMPDC0219EB
I
Timing chart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S10140 | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12 |
| S10140-1007 | CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm) |
| S10140-1008 | CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm) |
| S10140-1009 | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12 |
| S10140-1107 | CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm) |
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