參數(shù)資料
型號(hào)： S10127
廠商： Hamamatsu Photonics
英文描述： Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MP6
中文描述： 防治荒漠化領(lǐng)域的圖像傳感器前端照明傅里葉變換的CCD用于X射線成像
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 174K
代理商： S10127
CCD area image sensor
S8982, S10127
2
I
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Tstg
Topr
V
OD
V
RD
V
SG
V
OG
V
RG
V
TG
V
P1V
, V
P2V
V
P1H
, V
P2H
Vcc
Min.
-20
0
-0.5
-0.5
-15
-15
-15
-15
-15
-15
0
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
+70
+40
+20
+18
+15
+15
+15
+15
+15
+15
+7
Unit
°C
°C
V
V
V
V
V
V
V
V
V
I
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Symbol
V
OD
V
RD
V
OG
Vss
V
P1VH
, V
P2VH
V
P1VL
, V
P2VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
Vs
GH
Vs
GL
V
RGH
V
RGL
V
TGH
V
TGL
Vcc
Min.
12
12
-0.5
-
0
-9
0
-9
0
-9
0
-9
0
-9
4.75
Typ.
15
13
2
0
3
-8
3
-8
3
-8
3
-8
3
-8
5
Max.
-
14
5
-
6
-7
6
-7
6
-7
6
-7
6
-7
5.25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
Summing gate voltage
Reset gate voltage
Transfer gate voltage
+5 V power supply voltage
I
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Vertical shift register capacitance
Horizontal shift
register capacitance
Symbol
fc
C
P1
v, C
P2
v
Remark
Min.
-
-
-
-
-
-
-
-
-
-
0.99995
5
-
-
-
-
Typ.
1
60,000
350
550
20
220
20
220
250
450
0.99998
8
500
75
1
2
Max.
5
-
-
-
-
-
-
-
-
-
-
11
-
-
-
-
Unit
MHz
pF
*
1
S8982
S10127
S8982
S10127
S8982
S10127
S8982
S10127
C
P1H
, C
P2H
pF
Summing gate capacitance
Cs
G
pF
Reset gate capacitance
C
RG
pF
Transfer gate capacitance
C
TG
pF
Charge transfer efficiency
DC output level
Output impedance
Power dissipation
CTE
V
O
ut
Zo
P
*
2
*
3
*
3
*
3
*
4
-
V
mW
S8982
S10127
+5 V power supply current
Icc
mA
*1: S8982 only. In case of S10127, maximum frequency is strongly depend on peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: V
OD
=15 V
*4: Power dissipation of the on-chip amplifier.
相關(guān)PDF資料
PDF描述
S10K115 ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
S10K130 ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
S10K140 ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
S10K175 ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
S10K230 ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
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