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參數(shù)資料
| 型號： | S07M-M-08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.7 A, 1000 V, SILICON, SIGNAL DIODE, DO-219AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 73K |
| 代理商： | S07M-M-08 |
S07B-M, S07D-M, S07G-M, S07J-M, S07M-M
Document Number 85191
Rev. 1.1, 20-Aug-10
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Forward Current Derating Curve
Figure 2. Typical Instantaneous Forward Characteristics
0
0.6
0.8
1.2
1.0
020
40
60
80
100
120
140
160
A
v
erage
F
or
w
ard
C
u
rrent
(A)
Ambient Temperature (°C)
0.4
0.2
Resistive or inductive load
3.0 mm x 3.0 mm
40 m
thick copper pad areas
17375
100
1000
600
700
800
900
1000
1100
Instantaneo
u
sF
o
rw
ard
C
u
rrent
(mA)
InstantaneousForward Voltage (mV)
TJ = 150 °C
TJ =25 °C
TJ = 100 °C
17376
Figure 3. Typical Instantaneous Reverse Characteristics
Figure 4. Capacitance vs. Reverse Voltage
Instantaneo
u
sR
e
v
erse
C
u
rrent
(
A)
InstantaneousReverse Voltage (V)
0
100
200
300
400
500
600
700
800
900
0.01
0.1
10
1
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
17377
V R (V)
C(
p
F
)
0
5
10
15
20
25
30
35
40
10
9
8
7
6
5
4
3
2
1
0
17378
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| S10D-TP | 10 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
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參數(shù)描述 |
|---|---|
| S07M-M-18 | 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE GENPURP SMF DO219-E3-M |
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| S07N8A-F | 制造商:TE Connectivity 功能描述: |
| S07S60AGS2 | 制造商:EPCOS 制造商全稱:EPCOS 功能描述:Leaded Varistors Telecom Series |
| S07S95AGS2 | 制造商:TDK Epcos 功能描述: |
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