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參數(shù)資料
| 型號(hào)： | S07G/G2 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.7 A, 400 V, SILICON, SIGNAL DIODE, DO-219AB |
| 封裝： | PLASTIC, SMF, 2 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | S07G/G2 |
www.vishay.com
2
Document Number 85733
Rev. 3, 21-Feb-03
VISHAY
S07B to S07M
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Averaged over any 20 ms period
2)Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 m thick)
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
2) Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 m thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
3) Pulse test: 300 pulse width, 1 % duty cycle
Parameter
Test condition
Part
Symbol
Value
Unit
Maximum repetitive peak reverse voltage
S07B
VRRM
100
V
S07D
VRRM
200
V
S07G
VRRM
400
V
S07J
VRRM
600
V
S07M
VRRM
1000
V
Maximum RMS voltage
S07B
VRMS
70
V
S07D
VRMS
140
V
S07G
VRMS
280
V
S07J
VRMS
420
V
S07M
VRMS
700
V
Maximum DC blocking voltage
S07B
VDC
100
V
S07D
VDC
200
V
S07G
VDC
400
V
S07J
VDC
600
V
S07M
VDC
1000
V
Maximum average forward rectified current
Ttp = 75 °C
1)
IF(AV)
1.5
A
TA = 65 °C
2)
IF(AV)
0.7
A
Peak forward surge current 8.3 ms single half
sine-wave
TL = 25 °C
IFSM
25
A
Parameter
Symbol
Value
Unit
Thermal resistance junction to
ambient air
2)
RθJA
180
K/W
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
°C
Parameter
Test condition
Symbol
Typ.
Max
Unit
Maximum instantaneous forward
voltage
1.0 A3)
1.1
V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
IR
10
A
TA = 125 °C
IR
50
A
Reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
1.8
s
Typical capacitance at 4 V, MHz
CJ
4
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S07J/G2 | 0.7 A, 600 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07M/G2 | 0.7 A, 1000 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07M/G1 | 0.7 A, 1000 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07J/G1 | 0.7 A, 600 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07B/G2 | 0.7 A, 100 V, SILICON, SIGNAL DIODE, DO-219AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S07G-GS08 | 功能描述:二極管 - 通用，功率，開關(guān) 0.7 Amp 400 Volt 1.8uS RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| S07G-GS18 | 功能描述:二極管 - 通用，功率，開關(guān) 0.7 Amp 400 Volt 1.8uS RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| S07G-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:SURFACE MOUNT SILICON RECTIFIERS |
| S07G-M | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diode, High Voltage |
| S07GSD | 制造商:CHENDA 制造商全稱:Chendahang Electronics Co., Ltd 功能描述:SU RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER |
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