參數(shù)資料
型號: S-8521B25MC-ATK-T2
英文描述: Analog IC
中文描述: 模擬IC
文件頁數(shù): 13/37頁
文件大?。?/td> 599K
代理商: S-8521B25MC-ATK-T2
PWM Control & PWM/PFM Control Step-Down Switching Regulator-Controllers
Rev.7.2
S-8520/8521 Series
Seiko Instruments Inc.
13
For reference purpose, some efficiency data has been included in this document. For applications with
an input voltage range of 10 V or less, data was obtained by using TM6201 of Toyoda Automatic Loom
Works, Ltd. IRF7606, a standard of International Rectifier, was used for applications with an input
voltage range over 10 V. Refer to "Reference Data."
5.2 Bipolar PNP type
Figure 7 shows a sample circuit diagram using Toshiba 2SA1213-Y for the bipolar transistor (PNP).
The driving capacity for increasing the output current by means of a bipolar transistor is determined by
the h
FE
-value and the Rb-value of that bipolar transistor.
VIN
EXT
2SA1213-Y
VIN
Rb
Cb
Figure 7
The Rb-value is given by the following equation:
Ib
|IEXTL|
0.4
VIN-0.7
Rb=
Find the necessary base current Ib using the h
FE
- value of bipolar transistor by the equation, Ib =
Ipk/hFE, and select a smaller Rb-value.
A small Rb-value will certainly contribute to increasing the output current, but it will also adversely
affect the efficiency. Moreover, in practice, a current may flow as the pulses or a voltage drop may take
place due to the wiring resistance or some other reason. Determine an optimum value through
experimentation.
In addition, if speed-up capacitor Cb is inserted in parallel with resistance Rb, as shown in Figure 7, the
switching loss will be reduced, leading to a higher efficiency.
Select a Cb-value by using the following equation as a guide:
2
π
xRb x f
OSC
x 0.7
1
Cb
However, the practically-reasonable Cb value differs depending upon the characteristics of the bipolar
transistor. Optimize the Cb value based on the experiment result.
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