參數(shù)資料
型號(hào): S-80841CNPF-B82TFG
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
封裝: LEAD FREE, SNT-4
文件頁(yè)數(shù): 9/59頁(yè)
文件大?。?/td> 579K
代理商: S-80841CNPF-B82TFG
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.5.0_00
S-808xxC Series
Seiko Instruments Inc.
17
Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
(Ta
= 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
*1
VDET
VDET(S)
×0.98
VDET(S) VDET(S)
×1.02
V
1
Release voltage
+VDET
S-80808
0.802
0.834
0.867
V
1
S-80809
0.910
0.944
0.979
V
1
S-80810
1.017
1.054
1.091
V
1
S-80811
1.125
1.164
1.203
V
1
S-80812
1.232
1.273
1.315
V
1
S-80813
1.340
1.383
1.427
V
1
S-80814
1.448
1.493
1.538
V
1
Hysteresis width
VHYS
S-80808
0.018
0.034
0.051
V
1
S-80809
0.028
0.044
0.061
V
1
S-80810
0.037
0.054
0.071
V
1
S-80811
0.047
0.064
0.081
V
1
S-80812
0.056
0.073
0.091
V
1
S-80813
0.066
0.083
0.101
V
1
S-80814
0.076
0.093
0.110
V
1
Current consumption
ISS
VDD
= 1.5 V S-80808 to 09
1.3
3.5
μA
2
VDD
= 2.0 V S-80810 to 14
1.3
3.5
μA
2
Operating voltage
VDD
0.65
5.0
V
1
Output current
IOUT
Output transistor,
Nch, VDS
= 0.5 V, VDD = 0.7 V
0.04
0.2
mA
3
Leakage current
ILEAK
Output transistor,
Nch, VDS
= 5.0 V, VDD = 5.0 V
60
nA
3
Response time
tPLH
60
μs
1
Detection voltage
temperature
coefficient
*2
DET
V
Ta
V
Δ
Δ
Ta
= 40 to +85 °C
±100
±350
ppm/
°C
1
*1.
VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[]
[] 1000
C
ppm/
V
Ta
V
Typ.
V
C
mV/
Ta
V
DET
DET(S)
DET
÷
°
Δ
Δ
×
=
°
Δ
Δ
3
*
2
*
*1
*1.
Temperature change of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
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