參數(shù)資料
型號: S-80810CNPF-B9OTFU
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
封裝: HALOGEN AND LEAD FREE, SNT-4
文件頁數(shù): 10/59頁
文件大?。?/td> 579K
代理商: S-80810CNPF-B9OTFU
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.5.0_00
18
Seiko Instruments Inc.
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
(Ta
= 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
*1
VDET
VDET(S)
×0.98
VDET(S) VDET(S)
×1.02
V
1
Hysteresis width
VHYS
VDET
×0.03
VDET
×0.05
VDET
×0.08
V
1
Current consumption
ISS
VDD
= 3.5 V
S-80815 to 26
0.8
2.4
μA
2
VDD
= 4.5 V
S-80827 to 39
0.8
2.4
μA
2
VDD
= 6.0 V
S-80840 to 56
0.9
2.7
μA
2
VDD
= 7.5 V
S-80857 to 60
0.9
2.7
μA
2
Operating voltage
VDD
0.95
10.0
V
1
Output current
IOUT
Output transistor,
Nch, VDS
= 0.5 V
VDD
= 1.2 V
S-80815 to 60
0.59
1.36
mA
3
VDD
= 2.4 V
S-80827 to 60
2.88
4.98
mA
3
Leakage current
ILEAK
Output transistor,
Nch, VDS
= 10.0 V, VDD = 10.0 V
100
nA
3
Response time
tPLH
60
μs
1
Detection voltage
temperature
coefficient
*2
DET
V
Ta
V
Δ
Δ
Ta
= 40 to +85 °C
±100
±350
ppm/
°C
1
*1.
VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[]
[] 1000
C
ppm/
V
Ta
V
Typ.
V
C
mV/
Ta
V
DET
DET(S)
DET
÷
°
Δ
Δ
×
=
°
Δ
Δ
3
*
2
*
*1
*1.
Temperature change of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
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