
CMOS 64K-bit PARALLEL E
2
PROM
S-2860B/2864B
Seiko Instruments Inc.
3
DC Electrical Characteristics
1. S-2860B
2. S-2864B
Rewriting Times
Table 6
Parameter
Symbol
Min.
10
5
Typ.
Max.
Unit
Rewriting times
N
W
times/byte
Pin Capacitance
Table 7
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input capacitance
Input / output
capacitance
C
IN
C
I/O
V
IN
=0 V
V
I/O
=0 V
10
10
pF
pF
Parameter
Symbol
Conditions
5 V
±
10%
Typ.
3 V
±
10%
Typ.
Unit
Min.
Max.
Min.
Max.
Current consumption
(Read)
I
CC1
CE
≤
V
IL
, V
IN
≤
V
IL
or V
IN
≥
V
IH
I
OUT
=0 mA, f=1/t
RC
CE
≤
0.2 V, V
IN
≤
0.2 V or V
IN
≥
V
CC
0.2 V
I
OUT
=0 mA, f=1/t
RC
CE
≤
V
IL
, V
IN
≤
V
IL
or V
IN
≥
V
IH
30
15
mA
I
CC2
25
10
mA
Current consumption
(Program)
I
CC3
30
15
mA
I
CC4
I
SB1
I
SB2
I
LI
I
LO
V
OH
CE
≤
0.2 V, V
IN
≤
0.2 V or V
IN
≥
V
CC
0.2 V
CE
≥
V
IH
CE
≥
V
CC
0.2 V
V
IN
=GND to V
CC
V
I/O
=GND to V
CC
5-V operation: I
OH
=
400
μ
A
3-V operation: I
OH
=
100
μ
A
5-V operation: I
OL
=2.1 mA
3-V operation: I
OL
=400
μ
A
25
1
1.0
1.0
1.0
10
0.5
1.0
1.0
1.0
mA
mA
μ
A
μ
A
μ
A
Standby current
Input leakage current
Output leakage current
High level output
voltage
Low level output voltage
2.4
2.4
V
V
OL
0.4
0.4
V
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Current consumption
(Read)
I
CC1
CE
≤
V
IL
, V
IN
≤
V
IL
or V
IN
≥
V
IH
I
OUT
=0 mA, f=1/t
RC
CE
≤
0.2 V, V
IN
≤
0.2 V or V
IN
≥
V
CC
0.2 V
I
OUT
=0 mA, f=1/t
RC
CE
≤
V
IL
, V
IN
≤
V
IL
or V
IN
≥
V
IH
30
mA
I
CC2
25
mA
Current consumption
(Program)
I
CC3
30
mA
I
CC4
I
SB1
I
SB2
I
LI
I
LO
V
OH
CE
≤
0.2 V, V
IN
≤
0.2 V or V
IN
≥
V
CC
0.2 V
CE
≥
V
IH
CE
≥
V
CC
0.2 V
V
IN
=GND to V
CC
V
I/O
=GND to V
CC
25
1
1.0
1.0
1.0
mA
mA
μ
A
μ
A
μ
A
Standby current
Input leakage current
Output leakage current
High level output
voltage
Low level output voltage
I
OH
=
400
μ
A
2.4
V
V
OL
I
OL
=2.1 mA
0.4
V
Table 4
(Ta=
40
°
C to 85
°
C)
Table 5
(Ta=
40
°
C to 85
°
C, V
CC
=5 V
±
10%)