參數資料
型號: S-22H12
廠商: Seiko Instruments Inc.
英文描述: 1Kbits Non-Volatile CMOS RAM(1K位 CMOS非易失性RAM)
中文描述: 1Kbits非揮發(fā)性CMOS存儲器(每1000位的CMOS非易失性內存)
文件頁數: 6/11頁
文件大?。?/td> 77K
代理商: S-22H12
PARALLEL NON-VOLATILE RAM
S-22 Series
Seiko Instruments Inc.
5
3. Store Cycle
Parameter
Symbol
Min.
200
10
Typ.
Max
Unit
Store time
Store pulse width
Store disable time
Store enable time
t
ST
t
STP
t
STZ
t
OST
10
100
ms
ns
ns
ns
t
CW
Address
Data
input
Data
output
Write cycle 2 : CS control
t
DW
t
WR
(2)
Hi-Z
(3)
t
AS
t
WP
(1)
(2)
t
AS
t
CW
t
WC
t
DW
t
WC
WE
t
WHZ
t
DH
t
W
R
t
WLZ
CS
t
DH
t
WP
(1)
Hi-Z
(3)
(1) The write cycle starts when both CS and WE are low.
(2) t
WR
is the period of time from the rise of CS or WE whichever is the first to the end of write cycle.
(3) Output remains in high-impedance state when CS falls simultaneously with or after the fall of WE.
Write cycle 1 : WE control
Figure 5
Figure 6
Valid data
Valid data
Address
Data
input
Data
output
WE
CS
Store operation starts at the falling of STORE.
Table 9
Figure 7
t
OST
t
ST
Hi-Z
t
STZ
STORE
t
STP
Data I/O
相關PDF資料
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