參數(shù)資料
型號: RX1214B80W
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN Microwave power transistor(NPN 微波功率晶體管)
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-439A, 3 PIN
文件頁數(shù): 7/12頁
文件大?。?/td> 87K
代理商: RX1214B80W
1997 Feb 14
7
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
Fig.6 Input impedance as a function of frequency, associated with optimum load impedance.
V
CC
= 50 V; Z
O
= 10
; P
OUT
= 130 W.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+
j
j
MGA255
1.4 GHz
1.2 GHz
1.3
Zi
0.5
1
0.2
10
5
2
Fig.7 Load impedance as a function of frequency, associated with optimum input impedance.
V
CC
= 50 V; Z
O
= 10
; P
OUT
= 130 W.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
MGA254
ZL
1.2 GHz
0.5
1
0.2
10
5
2
1.4 GHz
1.3
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