參數(shù)資料
型號： RURD860S
廠商： HARRIS SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 8A, 600V Ultrafast Dual Diodes(8A, 600V 超快速雙二極管)
中文描述： 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大小： 49K
代理商： RURD860S
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
RURD840, RURD840S
RURD860, RURD860S
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 8A
-
-
1.5
-
-
1.5
V
I
F
= 8A, T
C
= 150
o
C
-
-
1.3
-
-
1.3
V
I
R
V
R
= 400V
-
-
100
-
-
-
μ
A
V
R
= 600V
-
-
-
-
-
100
μ
A
V
R
= 400V, T
C
= 150
o
C
-
-
500
-
-
-
μ
A
V
R
= 600V, T
C
= 150
o
C
-
-
-
-
-
500
μ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
μ
s
-
-
60
-
-
60
ns
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
-
70
-
-
70
ns
t
a
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
32
-
-
32
-
ns
t
b
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
21
-
-
21
-
ns
Q
RR
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
195
-
-
195
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
25
-
-
25
-
pF
R
θ
JC
-
-
2
-
-
2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
,
1
40
0.5
10
0
0.5
1
1.5
2
2.5
175
o
C
25
o
C
100
o
C
V
R
, REVERSE VOLTAGE (V)
0
200
400
600
300
500
500
0.01
0.1
1
10
100
100
175
o
C
100
o
C
25
o
C
I
R
,
μ
A
RURD840, RURD860, RURD840S, RURD860S
相關(guān)PDF資料
PDF描述
RURD840 8A, 400V - 600V Ultrafast Diodes
RURD840S 8A, 400V - 600V Ultrafast Diodes
RURD860 8A, 400V - 600V Ultrafast Diodes
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