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參數(shù)資料
| 型號： | RURD660S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6A, 600V Ultrafast Diodes |
| 中文描述： | 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | RURD660S |
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 6A
-
-
1.5
V
I
F
= 6A, T
C
= 150
o
C
-
-
1.2
V
I
R
V
R
= 600V
-
-
100
μ
A
V
R
= 600V, T
C
= 150
o
C
-
-
500
μ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
μ
s
-
-
55
ns
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
-
60
ns
t
a
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
28
-
ns
t
b
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
16
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
150
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
25
-
pF
R
θ
JC
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
1
30
0.5
10
0
0.5
2.5
1
2
1.5
175
o
C
25
o
C
100
o
C
I
F
,
0
600
400
300
200
V
R
, REVERSE VOLTAGE (V)
100
0.01
0.1
1
10
500
100
500
175
o
C
25
o
C
0.001
100
o
C
I
R
,
μ
A
RURD660, RURD660S
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