參數(shù)資料
型號： RTC-9701JEB-3
元件分類： 時(shí)鐘/數(shù)據(jù)恢復(fù)及定時(shí)提取
英文描述： REAL TIME CLOCK, PDSO20
封裝： VSOJ-20
文件頁數(shù)： 1/3頁
文件大?。?/td> 261K
代理商： RTC-9701JEB-3
79
Real time clock module
80
Real time clock module
SERIAL REAL TIME CLOCK MODULE WITH EEPROM
RTC-9701JE
Product number (please refer to page 5)
Q 4 1 9 7 0 1 7 x 0 0 0 1 0 0
Built-in frequency adjusted 32.768 kHz crystal unit.
Include EEPROM 4 kbit (256 x 16 bit) User Memory.
Include High Precision Voltage Detector. (2.5 V ± 0.1 V)
Serial Interface which can be controlled by 4 or 3 signal lines.
Timer IRQ and Alarm IRQ function available.
32.768 kHz clock frequency Output. (CMOS OUTPUT)
Wide range of clock voltage between 1.8 V and 5.5 V.
Low backup current : 0.8 A / 3.0 V. (Typ.)
Available for lead (Pb) - free soldering.
Available for lead (Pb) - free terminal.
The details are mentioned in the application manual.
Specifications (characteristics)
Absolute Max. rating
Item
Symbol
Condition
Min.
Max.
Unit
Supply voltage
VDD,VDD2
VDD, VDD2 to GND
-0.3
+6.0
V
Input voltage
VIN
Input Pin
GND -0.3 VDD +0.3
Output voltage
VAIN
VEX pin
-0.3
+6.0
VOUT
A
_____
IRQ, T
_____
IRQ,FOUT,DO pins GND -0.3 VDD +0.3
Storage temperature
TSTG
Stored as bare product
after unpacking
-55
+125
°C
Operating range
Item
Symbol
Condition
Min.
Max.
Unit
Power voltage
VDD
2.7
3.6
V
Clock voltage
VDD2
1.8
5.5
Analog voltage
VEX
VEX
1.4
5.5
Operating temperature
TOPR
No condensation
-40
+85
°C
Frequency characteristics
Item
Symbol
Condition
Range
Unit
Frequency tolerance
Δf/f
Ta = +25 °C, VDD2 = 3.0 V
B: 5 ±23 x 10-6
Oscillation start up time
tSTA
Ta = +25 °C, VDD2 = 3.0 V
3 Max.
s
Frequency temperature
characteristics
Top
Ta = -10 °C to +70 °C,VDD = 3.0 V, +25 °C
+10 /
-120
x 10-6
Frequency voltage characteristics
f/V
Ta = +25 °C, VDD = 1.8 V to 5.5 V
±2.0
x 10-6
Aging
fa
Ta = +25 °C, VDD = 3.0 V, first year
±5.0
x 10-6 / year
Please ask tighter tolerance.
DC characteristics GND =0V,VDD= 2.7V to 3.6V,VDD2 = 1.8V to 5.5V,Ta= -40 °C to +85 °C
Item
Symbol
Condition
Min.
Typ.
Max. Unit
VDD current
consumption
IDD1
VDD = 3.0 V, FOUT output off
0.2
3.0
A
IDD2
VDD = 3.0 V, CL = 0 pF,
FOUT = 32.768 kHz output
1.0
3.5
VDD2 current
consumption
IBK1
VDD2 = 3.0 V, FOUT output off
0.8
1.0
IBK2
VDD2 = 3.0 V, CL = 0 pF,
FOUT = 32.768 kHz output
0.8
1.0
Input voltage
VIH
CE, CLK, DI, FOE
0.8 VDD
VDD
V
VIL
0
0.2 VDD
Pulldown
RDWN
CE,FOE
75
600 kΩ
“H” Output voltage
VOH1
IOH = -1 mA
VDD -0.4
V
VOL2
IOH = -1 mA
VDD -0.4
“L” Output voltage
VOL1
IOL = 1 mA
GND
GND +0.4
VOH2
IOL = 1 mA
GND
GND +0.4
VOL3
A
_______
IRQ, T
________
IRQ
IOL = 2 mA
GND
GND +0.4
Terminal connection
No.
1
2
3
4
5
6
7
8
9
10
Pin terminal
VDD2
VEX
FOE
AIRQ
TIRQ
CE
CLK
DI
DO
VDD
No.
20
19
18
17
16
15
14
13
12
11
Pin terminal
N.C
GND
FOUT
#20
#11
#1
#10
External dimensions
(Unit: mm)
Metal may be exposed on the top or bottom of this product. This won't affect any quality, reliability or electrical spec.
1.5
Max.
5.4
1.3
(0.75)
7.0
±0.3
6.0
±0.2
0.65
0.22
0Min
(VSOJ 20-pin)
Actual size
EEPROM Memory characteristics
GND = 0V,VDD = 2.7 V to 3.6 V, VDD2 = 1.8 V to 5.5 V, Ta = -40 °C to +85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Memory contents
4 k (256 x 16)
bit
Program / Erase Cycle
105
Times
Current consumption
IDD3
EEPROM write
1
3
mA
Access time
tWNV
5
10
ms
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