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參數(shù)資料
| 型號： | RSF05G1-3P |
| 廠商： | Toshiba Corporation |
| 英文描述： | LOW POWER SWITCHING AND CONTROL APPLICATIONS |
| 中文描述： | 低電源開關(guān)和控制應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 313K |
| 代理商： | RSF05G1-3P |
RSF05G1
1P,RSF05G1
3P,RSF05G1
5P
2001-07-10
1
TOSHIBA THYRISITOR SILICON PLANAR TYPE
RSF05G1
1P,RSF05G1
3P,RSF05G1
5P
LOW POWER SWITCHING AND CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage
Repetitive Peak Reverse Voltage
Average On
State Current
Plastic Mold Type
Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in R
GK
MAXIMUM RATINGS
: V
DRM
= 400V
: V
RRM
= 400V
: I
T (AV)
= 500mA
: R
GK
=
1
k
, 2.7k
, 5.
1
k
(Typical)
CHARACTERISTIC
SYMBOL
RATING
UNIT
RSF05G1
1P
400
RSF05G1
3P
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
RSF05G1
5P
V
DRM
V
RRM
400
V
RSF05G1
1P
500
RSF05G1
3P
500
Non
Repetitive Peak
Reverse Voltage
(Non
Repetitive<
5ms, Tj = 0~125°C)
RSF05G1
5P
V
DSM
500
V
Average On
State Current
(Half Sine Waveform)
I
T(AV)
500
mA
R.M.S. On
State Current
I
T(RMS)
800
mA
9 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t
0.4
A
2
s
Critical Rate of Rise of On
State
Current
di / dt
10
A / μs
Peak Gate Power Dissipation
P
GM
0.1
W
Average Gate Power Dissipation
P
G(AV)
0.01
W
Peak Forward Gate Voltage
V
FGM
3.5
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
40~125
°C
Storage Temperature
T
stg
40~125
°C
Note:
di / dt Test Condition, i
G
= 5mA, t
gw
= 10μs, t
gr
≤
250ns
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO
92
SC
43
13
5A1A
EQUIVALENT CIRCUIT
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