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參數(shù)資料
| 型號： | RS1DL |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 0.8 AMP. Surface Mount Fast Recovery Rectifiers |
| 中文描述： | 0.8放大器。表面貼裝快速整流二極管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 213K |
| 代理商： | RS1DL |
FIG.5- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
I
0.6
0.8
1.0
0.4
1.2
1.4
1.6
1.8
0.1
0.01
1
10
30
FORWARD VOLTAGE. (V)
Pulse Width=300 s
1% Duty Cycle
RATINGS AND CHARACTERISTIC CURVES (RS1AL THRU RS1ML)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
A
0
20
40
60
80
100
120
140
160
180
0
0.5
1.0
1.2
LEAD TEMPERATURE. ( C)
o
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
P
1
10
100
0
40
10
20
30
50
NUMBER OF CYCLES AT 60Hz
TL=90 C
8.3ms Single Half Sine Wave
JEDEC Method
O
FIG.2- TYPICAL REVERSE CHARACTERISTICS
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
10
1
0.1
0.01
0.001
FIG.4- TYPICAL JUNCTION CAPACITANCE
J
1
10
100
1
10
40
REVERSE VOLTAGE. (V)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
O
I
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: B07
Tj=25 C
0
Tj=125 C
0
Tj=150 C
0
Tj=25 C
0
Tj=100 C
0
30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RS1DL R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 200V 0.8A 2-Pin Sub SMA T/R |
| RS1D-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A SURFACE MOUNT FAST RECOVERY RECTIFIERS |
| RS1D-M3/5AT | 制造商:Vishay Semiconductors 功能描述:1A,200V,SMRECTIFIER |
| RS1D-M3/61T | 制造商:Vishay Semiconductors 功能描述:1A,200V,SMRECTIFIER |
| RS1D-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER |
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