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參數(shù)資料
| 型號(hào)： | RQA0009SXTL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | RQA0009SXTL-E |
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REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Page 1 of 12
RQA0009SXAQS
Silicon N-Channel MOS FET
REJ03G1566-0100
Rev.1.00
Jul 04, 2007
Features
High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(V
DS
= 6 V, f = 520 MHz)
Compact package capable of surface mounting
Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
1. Gate
2. Source
3. Drain
4. Source
1
3
2, 4
1
2
3
4
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK )
Note:
Marking is “SX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
Pch
note
Tch
Tstg
Ratings
16
±5
3.2
15
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25
°
C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
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| RQA0009TXDQS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET |
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| RQA0010UXAQS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET |
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