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參數(shù)資料
| 型號： | RPT-34PB3F |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 131K |
| 代理商： | RPT-34PB3F |
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2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.A
Phototransistor, top view type
RPT-34PB3F
The RPT-34PB3F is a silicon planar phototransistor.
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
Applications
Dimensions (Units : mm)
Optical control equipment
Features
High sensitivity.
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
IC
VCEO
PC
VECO
Topr
Tstg
Limits
25~+85
30~+85
32
5
30
150
Unit
V
mA
mW
°C
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Electrical and optical characteristics (Ta = 25
C)
Parameter
Symbol
IC
ICEO
λP
VCE(sat)
θ1 / 2
trtf
Min.
2.0
Typ.
800
±36
10
Max.
0.5
0.4
Unit
mA
VCE
=5V, E=500LX
VCE
=10V(Black box)
IC
=1mA, E=500LX
VCC
=5V, IC=1mA, RL=100Ω
μA
nm
V
deg
μs
Conditions
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
2
0.6
2
0.5
1.1
1.0
Max.
2.5
±
1.0
(2.5)
5.2
±
0.3
24.0Min.
φ3.1±0.2
φ3.8±0.3
φ3.5
Emitter
Collector
1
2
Internal connection diagram
Notes :
1. Unspecfied tolerance
shall be
±0.2.
2. Dimension in parenthesis
are show for reference.
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