參數(shù)資料
型號： RPI-392
元件分類： 開關(guān)
英文描述： 4 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
文件頁數(shù)： 1/2頁
文件大?。?/td> 76K
代理商： RPI-392
RPI-392
Photointerrupter, General type
Applications
Printers
Facsimiles
AV equipment
Features
1) With a hook.
2) Gap 4mm.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
4-
φ0.8
2-
φ0.9
13.6
10.4
2.4
3.3
2.8
6
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Cathode
Anode
Gap
Optical axis center
Collector
Emitter
Thrugh hole
+0.1
+0.2
0
-0.1
2-
φ0.8
0
C-0.1
C-0.7
0
1.7
3
4-0.45
(2.54)
7
0.8
(1.5)
14.6
3
6
0.5
4
5.3
7
10
1
(2.1)
(2)
(10.4)
13.6
±0.05
3.5
±
0.5
4-0.4
Fig.1 Relative output vs. distance ( )
Fig.4 Relative output vs. distance (
)
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
03
4
5
12
1
0.8
0.6
0.4
0.2
0
d
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
2
0
0.5
1
1.5
2.5
3
1
0.8
0.6
0.4
0.2
0
d
AMBIENT TEMPERATURE : Ta (
°C)
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/P
C
(mW)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
20
0
20406080
100
0
20
40
60
80
100
PC
PD
AMBIENT TEMPERATURE : Ta (
°C)
FORWARD
CURRENT
:
I
F
(mA)
Fig.2 Forward current falloff
20
0
20
40
60
80
100
10
40
30
20
0
Fig.9 Dark current vs. ambient
temperature
AMBIENT TEMPERATURE : Ta (
°C)
DARK
CURRENT
:
I
CEO
(nA)
0
25
50
75
100
25
1000
100
10
1
0.1
VCE
=10V
VCE
=30V
VCE
=20V
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : VCE (
V)
Fig.10 Output characteristics
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td
:
t r
:
t f
:
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
Input
Output
48
610
2
0
3.0
2.0
1.0
5mA
10mA
15mA
20mA
IF
=25mA
COLLECTOR
CURRENT
:
I
C
(mA)
FORWARD CURRENT : IF (mA)
Fig.7 Collector current vs. forward current
0
1020304050
0
1
2
3
4
5
COLLECTOR CURRENT : IC (
A)
RELATIVE
TIME
:
t
r,t
f(
s)
Fig.8 Response time vs.
collector current
10
50
100
20
500 1000
200
2000
10
20
50
200
100
RL
=5k
RL
=1k
RL
=2k
tr
tf
tr tf
tf tr
FORWARD
CURRENT
:
I
F
(mA)
FORWARD VOLTAGE : VF (V)
Fig.3 Forward current vs. forward voltage
0
10
20
30
40
50
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
75
°C
50
°C
25
°C
0
°C
25
°C
RELATIVE
COLLECTOR
OUTPUT
:
I
C
(%)
AMBIENT TEMPERATURE : Ta (
°C)
Fig.6 Relative output vs. ambient
temperature
4020
0
20406080
100
0
20
40
60
80
100
120
160
140
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
fC
VCE(sat)
tr
tf
Min.
0.5
Typ.
1.3
800
0.1
10
Max.
1.6
10
0.5
0.5
Unit
VIF
=50mA
IF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.5mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
10
s
1
MHz
950
nm
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Infrared
light
emitter
diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
40 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Tsol
260/3
°C/sec
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
Input
(LED
)
Output
photo-
transistor
(
)
1mm from the body bottom.
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